Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction.
@article{arxiv.1005.0946,
title = {Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device},
author = {K. Y. Wang and K. W. Edmonds and A. C. Irvine and G. Tatara and E. De Ranieri and J. Wunderlich and K. Olejnik and A. W. Rushforth and R. P. Campion and D. A. Williams and C. T. Foxon and B. L. Gallagher},
journal= {arXiv preprint arXiv:1005.0946},
year = {2015}
}