English

Thermopower and Thermally Induced Domain Wall Motion in (Ga,Mn)As

Mesoscale and Nanoscale Physics 2010-03-03 v2 Materials Science Other Condensed Matter

Abstract

We study two reciprocal thermal effects in the ferromagnetic semiconductor (Ga,Mn)As by scattering theory: domain wall motion induced by a temperature gradient as well as heat currents pumped by a moving domain wall. The effective out-of-plane thermal spin transfer torque parameter PQβQP_Q \beta_{Q}, which governs the coupling between heat currents and a magnetic texture, is found to be of the order of unity. Unpinned domain walls are predicted to move at speed 10 m/s in temperature gradients of the order 10 K/μm{\rm K/ \mu m}. The cooling power of a moving domain wall only compensates the heating due to friction losses at ultra-low domain wall velocities of about 0.07 m/s. The Seebeck coefficient is found to be of the order 100-500 μV/K{\rm \mu V / K} at T=10 K, in good agreement with recent experiment.

Keywords

Cite

@article{arxiv.0911.1758,
  title  = {Thermopower and Thermally Induced Domain Wall Motion in (Ga,Mn)As},
  author = {Kjetil M. D. Hals and Arne Brataas and Gerrit E. W. Bauer},
  journal= {arXiv preprint arXiv:0911.1758},
  year   = {2010}
}

Comments

5 pages, 3 figures. Final version accepted by "Special issue: Caloritronics" in Solid State Communications