相关论文: Room-temperature magnetic p-n junctions for charge…

We study charge and spin transport across a junction between an altermagnet (AM) and a $p$-wave magnet (PM) using a continuum model with boundary conditions tailored to the spin-split band structures of the two materials. Remarkably,…

Current flow in electronic devices can be asymmetric with bias direction, a phenomenon underlying the utility of diodes and known as non-reciprocal charge transport. The promise of dissipationless electronics has recently stimulated the…

The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…

Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A3B5 semiconductors supplies not only holes, but also localized spins. The…

Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…

Compensated magnetic orders that can split the spin-degeneracy of electronic bands have become a very active field of research. As opposed to spin-orbit coupling, the splitting resulting from these "altermagnets" is not a small relativistic…

The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…

A p-n junction, an interface between two regions of a material populated with carriers of opposite charge, is a basic building block of solid state electronic devices. From the fundamental physics perspective, it often serves as a tool to…

We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…

Altermagnets (AMs) - magnetic materials that have spin-split bandstructure with zero net spin polarization can be classified as weak or strong depending upon the strength of altermagnetic term in the Hamiltonian. We theoretically…

The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that…

By using first-principles electronic structure calculations, we have studied the magnetic interactions in a proposed BaZn$_2$P$_2$-based diluted magnetic semiconductor (DMS). For a typical compound Ba(Zn$_{0.944}$Mn$_{0.056}$)$_2$P$_2$ with…

Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by…

In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling,…

The spin-orbit interaction in semiconductors is shown to result in an anisotropic contribution into the exchange Hamiltonian of a pair of localized conduction-band electrons. The anisotropic exchange interaction exists in semiconductor…

Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and…

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially…

Altermagnets have recently emerged as a distinct class of magnetic systems that exhibit spin splitting of electronic bands while retaining zero net magnetization. This unique combination makes them a promising platform for time-reversal…

The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare…

A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created…