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相关论文: Enhancement of anomalous Hall effect in Si/Fe mult…

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Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were…

材料科学 · 物理学 2026-01-19 S. S. Das , M. Senthil Kumar

SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with…

材料科学 · 物理学 2026-01-19 Sudhansu Sekhar Das , M. Senthil Kumar

The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large…

材料科学 · 物理学 2026-01-16 Sudhansu Sekhar Das , M. Senthil Kumar

The discovery of the anomalous Hall effect (AHE) in bulk metallic antiferromagnets (AFMs) motivates the search of the same phenomenon in two-dimensional (2D) systems, where a quantized anomalous Hall conductance can in principle be…

The observation of dissipationless anomalous Hall current is one of the experimental evidences to confirm the intrinsic origin of anomalous Hall effect. To study the origin of anomalous Hall effect in iron, Fe$_{100-x}$(SiO$_{2}$)$_{x}$…

介观与纳米尺度物理 · 物理学 2011-06-01 W. J. Xu , B. Zhang , Z. Wang , W. Li , R. H. Yu , X. X. Zhang

The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…

Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes could…

The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a…

强关联电子 · 物理学 2012-07-19 Atsuo Shitade , Naoto Nagaosa

We report anomalous Hall effect (AHE) in single crystals of quasi-two-dimensional Fe$_{3-x}$GeTe$_2$ ($x \approx 0.36$) ferromagnet grown by the flux method which induces defects on Fe site and bad metallic resistivity. Fe K-edge x-ray…

强关联电子 · 物理学 2018-04-18 Yu Liu , Eli Stavitski , Klaus Attenkofer , C. Petrovic

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…

材料科学 · 物理学 2015-03-17 D. Chiba , A. Werpachowska , M. Endo , Y. Nishitani , F. Matsukura , T. Dietl , H. Ohno

The anomalous Hall effect (AHE) of ferromagnetic thin films of Sr$_{1-x}$Ca$_{x}$RuO$_3$ (0 $\leq x \leq$ 0.4) is studied as a function of $x$ and temperature $T$. As $x$ increases, both the transition temperature $T_c$ and the…

材料科学 · 物理学 2009-11-10 R. Mathieu , A. Asamitsu , H. Yamada , K. S. Takahashi , M. Kawasaki , Z. Fang , N. Nagaosa , Y. Tokura

Cr0.68Se single crystals with two-dimensional (2D) character have been grown, and the detailed magnetization M(T), electrical transport properties (including longitudinal resistivity and Hall resistivity and thermal transport ones…

材料科学 · 物理学 2017-08-02 J. Yan , X. Luo , F. C. Chen , Q. L. Pei , G. T. Lin , Y. Y. Han , L. Hu , P. Tong , W. H. Song , X. B. Zhu , Y. P. Sun

A series of thin films Fe$_{4-x}$Ge$_x$N (x=0-1) was fabricated onto MgO substrates by magnetron sputtering with the aim of studying the possible enhancement of the anomalous Nernst effect (ANE), envisaged based on Density Functional Theory…

Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous…

材料科学 · 物理学 2022-05-31 Jakub Železný , Yuta Yahagi , Carlés-Gomez Ollivella , Yang Zhang , Yan Sun

The external field control of antiferromagnetism is a significant subject both for basic science and technological applications. As a useful macroscopic response to detect magnetic states, the anomalous Hall effect (AHE) is known for…

强关联电子 · 物理学 2016-07-05 Naoki Kiyohara , Takahiro Tomita , Satoru Nakatsuji

The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE…

We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions,…

We have investigated magnetic and transport properties of the {\it kagom\'{e}-bilayer} ferromagnet Fe$_{3}$Sn$_{2}$. A soft ferromagnetism and a large anomalous Hall effect are observed. The saturated Hall resistivity of Fe$_{3}$Sn$_{2}$ is…

材料科学 · 物理学 2012-03-22 T. Kida , L. Fenner , A. S. Wills , I. Terasaki , M. Hagiwara

An anomalous Hall effect (AHE) in antiferromagnetic (AF) systems with no net magnetization is of considerable interest for both fundamental physics and spintronic applications. Of particular interest is the two-dimensional van der Waals…

The ordinary and the extraordinary Hall effects were studied in gradually oxidized amorphous CoFeB ferromagnets over six orders of resistivity from the metallic to the strongly insulating regime. Polarity of the extraordinary Hall effect…

强关联电子 · 物理学 2017-06-21 A. Gerber , G. Kopnov
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