相关论文: High mobility holes at germanane/Ge(111) allotropi…

Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon…

We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$…

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensional hole gas structure of strained Ge quantum wells serves as…

Owing to their large effective mass, strong and tunable spin-orbit coupling, and complex band-structure, two-dimensional hole systems (2DHSs) in GaAs quantum wells provide rich platforms to probe exotic many-body physics, while also…

We report the results of magnetotransport experiments carried out on low-disorder 2D hole gases (2DHG) in the strongly correlated liquid regime, hosted in dopant-free (100) GaAs/AlGaAs single heterojunctions. Over a wide range of 2DHG…

We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker…

Structural and superconducting transitions of layered van der Waals (vdW) hydrogenated germanene (GeH) were observed under high-pressure compression and decompression processes. GeH possesses a superconducting transition at critical…

We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and…

The modulation depth of 2-D electron gas (2DEG) based THz modulators using AlGaAs/GaAs heterostructures with metal gates is inherently limited to < 30%. The metal gate not only attenuates the THz signal (> 90%) but also severely degrades…

We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface…

In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…

Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of…

The resistivity $\rho$ of high mobility dilute 2D holes in GaAs exhibits a peak at a certain temperature $T^*$ in zero magnetic field($B$=0). In the $T>T^*$ regime where d$\rho$/d$T<$0, we observe for the first time both the $\nu=1$ quantum…

We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled…

We have achieved mobilities in excess of 200,000 cm^2/Vs at electron densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene was achieved by…

We report high-quality two-dimensional (2D) electron and hole gases induced at the surface of graphite by the electric field effect. The 2D carriers reside within a few near-surface atomic layers and exhibit mobilities up to 15,000 and…

Rutile germanium dioxide (r-GeO$_2$) is a recently predicted ultrawide-band-gap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the…

Two-dimensional electron and hole gas systems, enabled through band structure design and epitaxial growth on planar substrates, have served as key platforms for fundamental condensed matter research and high performance devices. The…

The magnetic field-dependent longitudinal and Hall components of the resistivity rho_xx(H) and rho_xy(H) are measured in graphene on silicon dioxide substrates at temperatures from 1.6 K to room temperature. At charge densities near the…