相关论文: Thermal conductance across bonded SiOx-SiOx interf…
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate…
Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$,…
The interface of two solids in contact introduces a thermal boundary resistance (TBR), which is challenging to measure from experiments. Besides, if the interface is reactive, it can form an intermediate recrystallized or amorphous region,…
The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive…
Inherent properties of superconducting Bi2Sr2CaCu2O8+x films, such as the high superconducting transition temperature Tc, efficient Josephson coupling between neighboring CuO layers, and fast quasiparticle relaxation dynamics, make them a…
Understanding the ideal limit of interfacial thermal conductance (ITC) across semiconductor heterointerfaces is crucial for optimizing heat dissipation in practical applications. By employing a highly accurate and efficient machine-learned…
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude…
The existed theories and methods for calculating interfacial thermal conductance of solid-solid interface lead to diverse values that deviate from experimental measurements. In this letter, We propose a model to estimate the ITC at high…
The study of exotic superconductivity in two dimensions has been a central theme in solid state and materials research communities. Experimentally exploring and identifying new fascinating interface superconductors with a high transition…
By combining Three Dimensional Integrated Circuits with the Network-on-Chip infrastructure to obtain 3D Networks-on-Chip (3D-NoCs), the new on-chip communication paradigm brings several advantages on lower power, smaller footprint and lower…
The concept of interface superconductivity was introduced over 50 years ago. Some of the greatest physicists of that time wondered whether a quasi-two-dimensional (2D) superconductor can actually exist, what are the peculiarities of 2D…
3D integrated circuit (3D-IC) technology gained acceptance due to the ability to achieve extremely high level of integration, where hundreds of ICs are stacked vertically. Such level of integration can result in local power dissipation of…
The interface superconductivity in LaAlO$_{3}$-SrTiO$_{3}$ heterostructures reveals a non-monotonic behavior of the critical temperature as a function of the two-dimensional density of charge carriers. We develop a theoretical description…
We theoretically investigate the thermal boundary conductance across metal-nonmetal interfaces in the presence of the electron-phonon coupling not only in metal but also at interface. The thermal energy can be transferred from metal to…
Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar…
Overheating is a critical bottleneck limiting the performance and reliability of next-generation high-power and high-frequency electronics. Interfacial thermal resistance constitutes a significant portion of the total thermal resistance. In…
The presence of interfaces in semiconductor devices substantially hinders thermal transport, contributing disproportionately to the overall thermal resistance. However, approaches to enhance interfacial thermal transport remain scarce…
SiC is a robust semiconductor material considered ideal for high-power application due to its material stability and large bulk thermal conductivity defined by the very fast phonons. In this paper, however, we show that both…
Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…