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Van der Waals heterostructures (vdWHs) allow the assembly of high-crystalline two-dimensional (2D) materials in order to explore dimensionality effects in strongly correlated systems and the emergence of potential new physical scenarios. In…

强关联电子 · 物理学 2021-07-13 Carla Boix-Constant , Samuel Mañas-Valero , Rosa Córdoba , Eugenio Coronado

We investigate the lattice and electronic structures of the bulk and surface of the prototypical layered topological insulators Bi$_2$Se$_3$ and Bi$_2$Te$_3$ using ab initio density functional methods, and systematically compare the results…

介观与纳米尺度物理 · 物理学 2020-12-01 K. Shirali , W. A. Shelton , I. Vekhter

Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only…

材料科学 · 物理学 2024-03-14 Hongguang Wang , Varun Harbola , Yu-Jung Wu , Peter A. van Aken , Jochen Mannhart

Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…

材料科学 · 物理学 2020-12-30 Hua Bai , Xinwei Wang , Weikang Wu , Pimo He , Zhu'an Xu , Shengyuan A. Yang , Yunhao Lu

Sparse matter is characterized by regions with low electron density and its understanding calls for methods to accurately calculate both the van der Waals (vdW) interactions and other bonding. Here we present a first-principles density…

材料科学 · 物理学 2010-06-15 Elisa Londero , Elsebeth Schroder

Intralayer deformation in van der Waals (vdW) heterostructures is generally assumed to be negligible due to the weak nature of the interactions between the layers, especially when the interfaces are found incoherent. In the present work,…

材料科学 · 物理学 2018-07-18 Benoit Van Troeye , Aurélien Lherbier , Jean-Christophe Charlier , Xavier Gonze

Numerical simulations of systems at coexistence are known to yield unstable fields in some regions of the density parameters, as well as inequivalence of ensembles. The Van der Waals-like loops are attributed to effects of the interface…

统计力学 · 物理学 2021-04-30 Jozismar Rodrigues Alves , Vera Bohomoletz Henriques

One-dimensional (1D) van der Waals heterostructures based on carbon nanotube templates are raising a lot of excitement due to the possibility of creating new optical and electronic properties, by either confining molecules inside their…

材料科学 · 物理学 2021-07-22 Sofie Cambré , Ming Liu , Dmitry Levshov , Keigo Otsuka , Shigeo Maruyama , Rong Xiang

Multilayer van der Waals (vdWs) heterostructures assembled by diverse atomically thin layers have demonstrated a wide range of fascinating phenomena and novel applications. Understanding the interlayer coupling and its correlation effect is…

介观与纳米尺度物理 · 物理学 2017-06-26 Liang Xu , Wei-Qing Huang , Wangyu Hu , Bing-Xin Zhou , Anlian Pan , Gui-Fang Huang

Recent research showed that the rotational degree of freedom in stacking 2D materials yields great changes in the electronic properties. Here we focus on an often overlooked question: are twisted geometries stable and what defines their…

材料科学 · 物理学 2022-10-25 Andrea Silva , Victor E. P. Claerbout , Tomas Polcar , Denis Kramer , Paolo Nicolini

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…

材料科学 · 物理学 2021-02-16 Yan Liang , Ning Mao , Ying Dai , Liangzhi Kou , Baibiao Huang , Yandong Ma

Rhombohedral-stacked transition metal dichalcogenides (TMDs) break inversion symmetry between adjacent layers, giving rise to an intrinsic out-of-plane ferroelectric polarization.Controlling the formation of this stacking polytype is…

Repulsive short-range and attractive long-range van der Waals (vdW) forces have an appreciable role in the behavior of extended molecular systems. When using empirical force fields - the most popular computational methods applied to such…

化学物理 · 物理学 2023-09-27 Almaz Khabibrakhmanov , Dmitry V. Fedorov , Alexandre Tkatchenko

Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible…

Van der Waals layered and 2D materials constitute an extraordinary playground for condensed matter physics, since the strong confinement of wavefunctions to two dimensions supports a diverse set of correlated phenomena. By creating…

介观与纳米尺度物理 · 物理学 2023-08-14 Joohyung Park , Ayan N. Batyrkhanov , J. R. Schaibley , Oliver L. A. Monti

Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications.…

We review the screening nature and many-body physics foundation of the van der Waals density functional (vdW-DF) method, a systematic approach to construct truly nonlocal exchange-correlation energy density functionals. To that end we…

材料科学 · 物理学 2021-12-30 Per Hyldgaard , Yang Jiao , Vivekanand Shukla

A universal theoretical framework has been proposed that the solid-to-liquid glass transition and macromolecular motion within the entire temperature range from Tg to Tm and the liquid flow are absolutely determined by the intrinsic 8…

统计力学 · 物理学 2010-05-13 Jia-Lin Wu

The growth of wafer-scale van der Waals (vdW) thin films and heterostructures by molecular beam epitaxy (MBE) is important for future applications in quantum technologies, next generation optoelectronic devices, and fundamental physics…

材料科学 · 物理学 2025-08-13 Qihua Zhang , Maria Hilse , Stephanie Law

Van der Waals (vdW) crystals are prone to twisting, sliding, and buckling due to inherently weak interlayer interactions. While thickness-controlled vdW structures have attracted considerable attention as ultrathin semiconducting channels,…