相关论文: Lorentzian Switching Dynamics in HZO-based FeMEMS …
Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing…
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $\mu$m $\times$ 30…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
The continuous effort in making artificial neural networks more alike to human brain calls for the hardware elements to implement biological synapse-like functionalities. The recent experimental demonstration of ferroelectric-like FETs…
Flexible electronics and neuromorphic computing face key challenges in material integration and function retention. In particular, freestanding membranes suffer from slow sacrificial layer removal and interfacial strain, while neuromorphic…
Achieving brain-like density and performance in neuromorphic computers necessitates scaling down the size of nanodevices emulating neuro-synaptic functionalities. However, scaling nanodevices results in reduction of programming resolution…
The multiple ferroelectric polarization tuned by external electric field could be used to simulate the biological synaptic weight. Ferroelectric synaptic devices have two advantages compared with other reported ones: One is the intrinsic…
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here,…
A multi-bit digital weight cell for high-performance, inference-only non-GPU-like neuromorphic accelerators is presented. The cell is designed with simplicity of peripheral circuitry in mind. Non-volatile storage of weights which eliminates…
In an effort to compete with the brain's efficiency at processing information, neuromorphic hardware combines artificial synapses and neurons using mixed-signal circuits and emerging memories. In ferroelectric resistive weights, the…
We propose non-volatile memory (NVM) designs based on Piezoelectric Strain FET (PeFET) utilizing a piezoelectric/ferroelectric (PE/FE such as PZT) coupled with 2D Transition Metal Dichalcogenide (2D-TMD such as MoS2) transistor. The…
Neuromorphic computing, inspired by biological intelligence, offers a pathway to revolutionize artificial intelligence (AI) by unifying memory and processing in an energy-efficient, sustainable framework for data-intensive tasks.…
In recent years, new methods for solving partial differential equations (PDEs) such as Monte Carlo random walk methods have gained considerable attention. However, due to the lack of hardware-intrinsic randomness in the conventional von…
Strong coupling between electrical and mechanical phenomena and the presence of switchable polarization have enabled applications of ferroelectric materials for nonvolatile memories (FeRAM), data storage, and ferroelectric lithography.…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
Nanoelectronic devices emulating neuro-synaptic functionalities through their intrinsic physics at low operating energies is imperative toward the realization of brain-like neuromorphic computers. In this work, we leverage the non-linear…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-mediated transport often leads to complex and debated…
Ferroelectric nanostructures can be formed by local switching of domains using techniques such as piezo-force microscopy (PFM). Understanding lateral size effects is important to determine the minimum feature size for writing ferroelectric…