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High-pressure superconductivity in a rare-earth doped Ca0.86Pr0.14Fe2As2 single crystalline sample has been studied up to 12 GPa and temperatures down to 11 K using designer diamond anvil cell under a quasi-hydrostatic pressure medium. The…

To achieve an uncertainty of 0.25 mK in single-pressure refractive-index gas thermometry (SPRIGT), the relative pressure variation of He-4 gas in the range 30 kPa to 90 kPa, should not exceed 4 ppm (k=1). To this end, a novel pressure…

We present the concept and the results of pilot measurements of tunneling in a system {Al/$\delta_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$\delta$-GaAs}…

The influence of mechanical strain on the critical current (Ic) is investigated for MgB2/stainless steel (SUS316) superconducting tapes. The tapes are fabricated by using 'powder in tube' method and deformation process without any heat…

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds…

In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For…

Straining graphene results in the appearance of a pseudo-magnetic field which alters its local electronic properties. Applying a pressure difference between the two sides of the membrane causes it to bend/bulge resulting in a resistance…

A traditional split-Hopkinson pressure bar system has been modified by the addition of ZK60A magnesium alloy pressure bars in order to increase the resolution of data when examining specimens of low-density, high-density and ultra-high…

The behavior of metals at high pressure is of great importance to the fields of shock physics, geophysics, astrophysics, and nuclear materials. In order to further understand the properties of metals at high pressures we studied the…

The gain measurements of several 1 mm-thick, 10$\times$10 cm$^2$ Thick Gaseous Electron Multipliers (ThGEMs), operated in pure argon at 3.3 bar and room temperature are presented. Electrostatic simulations, performed with the COMSOL…

An analysis of $n=3 \to 2$ transition lines of carbon-like silicon reveals that some ratios of line intensities are sensitive to the electron density. The ratio between two group of $3d\to2p$ transition lines at 55.246 \AA and 55.346 \AA is…

We report measurements of electrical resistivity under pressure to 5.8 GPa, magnetization to 6.7 GPa,and ac susceptibility to 7.1 GPa in KFe2As2. The previously reported change of slope in the pressure dependence of the superconducting…

Optical conductivity [$\sigma(\omega)$] of YbS has been measured under pressure up to 20 GPa. Below 8 GPa, $\sigma(\omega)$ is low since YbS is an insulator with an energy gap between fully occupied 4$f$ state and unoccupied conduction…

Here we perform a series of time-resolved experiments where a 100 fs pump pulse is tuned between 528 nm and 555 nm, across the second indirect gap of intrinsic silicon at ~540 nm which involves electrons in a higher-lying conduction band…

The hydrostatic pressure is expected to be an effective knob to tune the magnetostructural phase transitions of hexagonal MMX alloy. In this study, magnetization measurements under hydrostatic pressure were performed on a MMX martensitic…

Measurements of the superconducting transition temperatures for Al-doped, C-doped and neutron-damaged-annealed MgB2 samples under pressure up to ~8 kbar are presented. The dT_c/dP values change systematically with the decrease of the…

Permeability measured on three samples in a triaxial cell under effective confining pressure from 0.2 to 2.5 MPa ranges from 10E-18 to 10E-19m2. Overall, results indicate that permeability decreases with effective confining pressure up to…

This paper presents the experimental results of $17~MeV$ proton irradiation on a $60~GHz$ low power, half-duplex transceiver (TRX) chip implemented in $65~nm$ CMOS technology. It supports short range point-to-point data rate up to $6~Gbps$…

The high-pressure growth technique is a vital approach that facilitates the stabilization of new phases and allows for meticulous control of structural parameters, which significantly impact electronic and magnetic properties. We present a…

Two modifications have been made to a miniature ceramic anvil high pressure cell (mCAC) designed for magnetic measurements at pressures up to 12.6 GPa in a commercial superconducting quantum interference (SQUID) magnetometer [N. Tateiwa et…