相关论文: Three-Dimensional Electrostatic and Quantum-Confin…
We study the nature of the zero-temperature phase transition between a d-wave superconductor and a Mott insulator in two dimensions. In this ``quantum confinement transition'', spin and charge are confined to form the electron in the Mott…
One-dimensional (1D) quantum systems are a cornerstone of many-body physics. However, their realization in solids has traditionally relied on top-down methods, which are limited by structural disorder and coarse confinement. Here, we…
In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic…
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO$_2$ interface which interferes with controllably confining single and few electrons. In this work…
Spin-valley properties in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDC) has attracted significant interest due to the possible applications in quantum computing. Spin-valley properties can be exploited in TMDC…
Layered transition metal dichalcogenides (TMDs) provide an ideal platform for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order. When TMDs are reduced in thickness to the 2-D…
We present a theoretical and experimental study of photonic and electronic transport properties of a voltage biased InAs semiconductor double quantum dot (DQD) that is dipole-coupled to a superconducting transmission line resonator. We…
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this article, we present our results on…
In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of…
We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite difference time domain (FDTD) method. The presented model is…
A major challenge in the field of quantum computing is the construction of scalable qubit coupling architectures. Here, we demonstrate a novel tuneable coupling circuit that allows superconducting qubits to be coupled over long distances.…
We show that quantum confinement in the valence and conduction bands of semiconducting single-walled carbon nanotubes can be engineered by means of artificial defects. This ability holds potential for designing future nanotube-based quantum…
We present a symmetry-based calculation of the electronic structure of a compound semiconductor quantum dot (QD) in the sp^3s* tight-binding model including the spin-orbit interaction. The Hamiltonian matrix is diagonalized exactly for CdTe…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent model to characterize partially overlapped parallel contacts with varying specific contact resistivity along…
In the framework of four-band envelope-function formalism, developed earlier for spherical semiconductor nanocrystals, we study the electronic structure and optical properties of quantum-confined lead-salt (PbSe and PbS) nanowires (NWs)…
A waveguide coincides with a strip having two narrows of diameter $\epsilon$. Electron motion is described by the Helmholtz equation with Dirichlet boundary condition. The part of waveguide between the narrows plays the role of resonator…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the…
The scalability of quantum photonic integrated circuits opens the path towards large-scale quantum computing and communication. To date, this scalability has been limited by the stochastic nature of the quantum light sources. Moreover,…