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We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…

强关联电子 · 物理学 2009-01-08 J. Sirker , J. Damerau , A. Klümper

Using the method which retains the rotation symmetry of spin components in the paramagnetic state and has no preset magnetic ordering, spectral and magnetic properties of the two-dimensional t-J model in the normal state are investigated…

强关联电子 · 物理学 2009-11-10 A. Sherman , M. Schreiber

The Hubbard model is a longstanding problem in the theory of strongly correlated electrons and a very active one in the experiments with ultracold fermionic atoms. Motivated by current and prospective quantum simulations, we apply a…

强关联电子 · 物理学 2022-11-07 Aritra Sinha , Marek M. Rams , Piotr Czarnik , Jacek Dziarmaga

The finite-temperature density-matrix renormalization-group method is applied to the one-dimensional Kondo lattice model near half filling to study its thermodynamics. The spin and charge susceptibilities and entropy are calculated down to…

强关联电子 · 物理学 2009-10-31 N. Shibata , H. Tsunetsugu

We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…

强关联电子 · 物理学 2009-11-10 K. Haule , A. Rosch , J. Kroha , P. Wölfle

Finite-temperature properties of weakly doped antiferromagnets as modeled by the two-dimensional t-J model and relevant to underdoped cuprates are investigated by numerical studies of small model systems at low doping. Two numerical methods…

强关联电子 · 物理学 2007-05-23 D. Veberic , P. Prelovsek , H. G. Evertz

Low energy properties of the metallic state of the 2-dimensional tJ model are presented at various densities and temperatures for second neighbor hopping t', with signs that are negative or positive corresponding to hole or electron doping.…

强关联电子 · 物理学 2026-01-16 B. Sriram Shastry , Peizhi Mai

In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

Due to significant progress in quantum gas microscopy in recent years, there is a rapidly growing interest in real-space properties of single mobile dopands created in correlated antiferromagnetic (AFM) Mott insulators. However, a detailed…

量子气体 · 物理学 2025-04-11 Toni Guthardt , Markus Scheb , Jan von Delft , Fabian Grusdt , Annabelle Bohrdt

The spin dynamics of electron doped Mott insulators on a triangular lattice is studied based on the $t-J$ model. It is found that the particularly universal behaviors of integrated dynamical spin structure factor seen in the doped Mott…

强关联电子 · 物理学 2015-06-12 Bin Liu , Ying Liang

A relaxation-function theory for the dynamic spin susceptibility in the $t$--$J$ model is presented. By a sum-rule-conserving generalized mean-field approximation (GMFA), the two-spin correlation functions of arbitrary range, the staggered…

强关联电子 · 物理学 2015-05-13 A. A. Vladimirov , D. Ihle , N. M. Plakida

We present a finite temperature ($T$) study of the t-J model on the two-dimensional triangular lattice for the negative hopping $t$, as relevant for the electron-doped Na$_x$CoO$_2$ (NCO). To understand several aspects of this system, we…

强关联电子 · 物理学 2009-11-11 Jan O. Haerter , Michael R. Peterson , B. Sriram Shastry

It is generally accepted that doped Mott insulators can be well characterized by the t-J model. In the t-J model, the electron fractionalization is dictated by the phase string effect. We found that in the underdoped regime, the…

强关联电子 · 物理学 2012-01-18 Peng Ye , Chu-Shun Tian , Xiao-Liang Qi , Zheng-Yu Weng

The mechanism underlying charge transport in strongly correlated quantum systems, such as doped antiferromagnetic Mott insulators, remains poorly understood. Here we study the expansion dynamics of an initially localized hole inside a…

量子气体 · 物理学 2022-07-13 Lauritz Hahn , Annabelle Bohrdt , Fabian Grusdt

We apply the finite-temperature variational cluster approach to a strongly correlated and spin-orbit coupled model for four electrons (i.e. two holes) in the $t_{2g}$ subshell. We focus on parameters suitable for antiferromagnetic Mott…

强关联电子 · 物理学 2021-07-21 Jan Lotze , Maria Daghofer

We review recent results for the properties of doped antiferromagnets, obtained by the numerical analysis of the planar t-J model using the novel finite-temperature Lanczos method for small correlated systems. First we shortly summarize our…

强关联电子 · 物理学 2007-05-23 J. Jaklic , P. Prelovsek

In this work, we study the t-J model using a two-pole approximation within the composite operator method. We choose a basis of two composite operators -- the constrained electrons and their spin-fluctuation dressing -- and approximate their…

强关联电子 · 物理学 2021-12-21 Amir Eskandari-asl , Adolfo Avella

The evolution of hole and spin dynamics in high temperature superconductors is studied within the self-consistent noncrossing approximation of the t-J model in the small hole density limit. As the doping concentration is increased,…

凝聚态物理 · 物理学 2009-10-31 Bumsoo Kyung

The doping, temperature and energy dependence of the dynamical spin structure factors of the underdoped lanthanum cuprates in the normal state is studied within the t-J model using the fermion-spin transformation technique. Incommensurate…

强关联电子 · 物理学 2009-11-07 Feng Yuan , Shiping Feng , Zhao-Bin Su , Lu Yu

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld
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