相关论文: Four-Transistor Bipolar Series-Parallel Module Str…

We show that topological superconductivity may emerge upon doping of transition metal dichalcogenide heterobilayers above an integer-filling magnetic state of the topmost valence moir\'e band. The effective attraction between charge…

Phase transition materials (PTM) have drawn significant attention in recent years due to their abrupt threshold switching characteristics and hysteretic behavior. Augmentation of the PTM with a transistor has been shown to provide enhanced…

This paper presents a novel dissipativity-based distributed droop-free control and communication topology co-design approach for voltage regulation and current sharing in DC microgrids (DC MGs) with generic ``ZIP'' (constant impedance (Z),…

We report the demonstration of hybrid high-Tc-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices were fabricated by our newly-developed mechanical bonding…

The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic…

The development of modular and versatile quantum interconnect hardware is a key next step in the scaling of quantum information platforms to larger size and greater functionality. For superconducting quantum systems, fast and…

The equivalent electrical circuit of the Ebers-Moll type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A…

Quantized electric quadrupole insulators have recently been proposed as novel quantum states of matter in two spatial dimensions. Gapped otherwise, they can feature zero-dimensional topological corner mid-gap states protected by the bulk…

Hybrid analog-digital (A/D) transceivers designed for millimeter wave (mmWave) systems have received substantial research attention, as a benefit of their lower cost and modest energy consumption compared to their fully-digital…

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…

Superfluidity in coupled electron-hole sheets of bilayer graphene is predicted here to be multicomponent because of the conduction and valence bands. We investigate the superfluid crossover properties as functions of the tunable carrier…

We study topological transitions in one dimensional superconductors that can harbor multiple edge Majorana bound states protected by chiral symmetry. The chiral symmetry arises due to the structure of the internal spin degrees of freedom of…

We introduce a new model to study the oscillations of opposite flows sharing a common bottleneck and moving on two Totally Asymmetric Simple Exclusion Process (TASEP) lanes. We provide a theoretical analysis of the phase diagram, valid when…

The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to…

We propose a network-model realization of magnetic higher-order topological phases (HOTPs) in the presence of the combined space-time symmetry $C_4\mathcal{T}$ -- the product of a fourfold rotation and time-reversal symmetry. We show that…

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of…

Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelectric material of high thermoelectric figure-of-merit (ZT)…

Due to the inherent in-direct bandgap nature of Silicon, heterogeneous integration of semiconductor lasers on Silicon on Insulator (SOI) is crucial for next-generation on-chip optical interconnects. Compact, high-efficient and high-tolerant…

Electric-dipole-forbidden transitions play an important role as in quantum sensing, quantum information, and fundamental test in physics. As such, the development of novel and sensitive spectroscopic methods is of major interest. Here, we…

Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…