相关论文: Double quantum dots with quenched charging energy …

Spin qubits in germanium are a promising contender for scalable quantum computers. Reading out of the spin and charge configuration of quantum dots formed in Ge/Si core/shell nanowires is typically performed by measuring the current through…

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si…

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate-tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the…

Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show…

We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations…

We demonstrate a method to determine energy level degeneracies using non-equilibrium electronic transport through voltage-biased quantum dots. We establish the general validity of this approach using single and double quantum dots in…

We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of…

We present the full three dimensionality of an electrostatically calculated stability diagram for triple quantum dots. The stability diagram maps out the favored charge configuration of the system as a function of potential shifts due to…

We calculate the charge susceptibility and the linear and differential conductances of a double quantum dot coupled to two metallic reservoirs both at equilibrium and when the system is driven away from equilibrium. This work is motivated…

It was proposed that a double quantum dot can be used to be a detector of spin bias. Electron transport through a double quantum dot is investigated theoretically when a pure spin bias is applied on two conducting leads contacted to the…

We propose a resonator-assisted entangling gate for spin qubits with high fidelity. Each spin qubit corresponds to two electrons in a nanowire double quantum dot, with the singlet and one of the triplets as the logical qubit states. The…

We present a theory of electronic properties and the spin blockade phenomena in a gated linear triple quantum dot. Quadruple points where four different charge configurations are on resonance, particularly involving (1,1,1) configuration,…

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map…

Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile…

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation…

We present gate-controlled single, double, and triple dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal…

A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

Double quantum dots are one of the promising two-state quantum systems for realizing qubits. In the quest of successfully manipulating and reading information in qubit systems, it is of prime interest to control the charge response of the…