相关论文: Design of a Gm-C Dynamic Amplifier with High Linea…

A tabletop low-noise differential amplifer with a bandwidth of 100 kHz is presented. Low voltage drifts of the order of 100 nV/day are reached by thermally stabilizing relevant amplifer components. The input leakage current is below 100 fA.…

We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load made of a cross-coupled transistor pair. Starting from the…

As transistor sizes reach the mesoscopic scale, the limitations of traditional methods in ensuring thermodynamic consistency have made power dissipation optimization in transistor amplifiers a critical challenge. Based on stochastic…

We introduce a zero-bias superconducting voltage amplifier that harvests energy from a thermal gradient by exploiting negative differential resistance (NDR) in an asymmetric tunnel junction. The device is based on an asymmetric…

We report on the design and characterization of a high-power amplifier with an output power of 36.5 dBm for a frequency range of 50 MHz to 1000 MHz with a total gain of 40 dB. The amplifier is optimized for driving acousto-optic and…

The true-differential superconductor on-chip amplifier has complementary outputs that float with respect to chip ground. This improves signal integrity and compatibility with the receiving semiconductor stage. Both source-terminated and…

We present an all-fiber design for a Tm-based fiber amplifier that can tune over 1992-2065 nm with 300-350 W single-frequency (<100 kHz) output. Over 180 W is achieved out to 2085 nm with <10% ASE content without utilizing ASE spectral…

The gain of SiPMs depends both on bias voltage and on temperature. For stable operations, both need to be kept constant. In an ILC calorimeter with millions of channels, this is a challenging task. It is, therefore, desirable to compensate…

This paper presents a power amplifier designed for Wi-Fi 6E using the 2 um gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) process. By employing third-order inter-modulation signal cancellation, harmonic suppression, and an…

A novel topology for a high gain two-stage amplifier is proposed. The proposed circuit is designed in a way that the non-dominant pole is at output of the first stage. A positive capacitive feedback (PCF) around the second stage introduces…

The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch…

We have designed and characterized a cryogenic amplifier for use in $^3$He NMR spectrometry. The amplifier, with a power consumption of $\sim 2.5$ mW, works at temperatures down to 4~K. It has a hi-impedance input for measuring a signal…

An active microwave C-section is proposed which provides a flat magnitude transmission in a wide frequency band along with a frequency-dependent group delay response considering practical dissipation losses. The key lies in integrating a…

A Low-Power Variable Gain (VG) mm-Wave Low Noise Amplifier (LNA) is designed and simulated in a 28-nm CMOS process. The LNA utilizes a simple, yet novel, technique presented in this paper to vary the small-signal output resistance to…

Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this…

The gain of silicon photomultipliers (SiPMs) increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be adjusted to compensate temperature changes. We have tested this concept with…

This paper presents dynamic thermal analyses of a power amplifier. All the investigations are based on the transient junction temperature measurements performed during the circuit cooling process. The presented results include the cooling…

The gain of silicon photomultipliers (SiPMs) increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept…

Future high-energy physics experiments using SiPMs as photosensitive elements may require operation at low temperatures (down to 80 K) to measure single photons with high time resolution in a highly radioactive environment. This calls for a…

In this paper, a two-stage ultra-low-power operational amplifier is designed, and a comparative analysis of the proposed subthreshold complementary amplifier is presented between 180nm, 90nm, and 45nm CMOS technology. The proposed…