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相关论文: Electron doping in single crystalline BaBiO$_3$: B…

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Mixed-valent perovskite oxides based on BaBiO3 (BBO) are, like cuperates, well-known high-Tc superconductors. Recent ab inito calculations have assigned the high-Tc superconductivity to a correlation-enhanced electron--phonon coupling…

材料科学 · 物理学 2013-12-03 Binghai Yan , Martin Jansen , Claudia Felser

First-principles calculations were performed to investigate the electronic structure and the Fermi surface of the newly discovered low-temperature superconductor: fluorine-doped WO3. We find that F doping provides the transition of the…

超导电性 · 物理学 2015-06-03 I. R. Shein , A. L. Ivanovskii

We investigate the lattice structure of heterostructures comprising of ferroelectric BaTiO$_3$ (BTO) thin films and BaBiO$_3$ (BBO), the insulating parent-compound of the high Tc superconductor. Motivated by theoretical predictions of…

材料科学 · 物理学 2024-05-29 Merve Baksi , Divine P. Kumah

BaBiO3 is a prototype ``charge ordering system'' forming interpenetrating sublattices with nominal valence Bi(3+) and Bi(5+). It can also be regarded as a three-dimensional version of a Peierls insulator, the insulating gap being a…

强关联电子 · 物理学 2009-11-07 Ilka B. Bischofs , Vladimir N. Kostur , Philip B. Allen

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling…

材料科学 · 物理学 2012-12-07 Helin Cao , Suyang Xu , Ireneusz Miotkowski , Jifa Tian , Deepak Pandey , M. Zahid Hasan , Yong P. Chen

BaIrO3 is a novel insulator with coexistent weak ferromagnetism, charge and spin density wave. Dilute RE doping for Ba induces a metallic state, whereas application of modest pressure readily restores an insulating state characterized by a…

强关联电子 · 物理学 2015-05-14 O. B. Korneta , S. Chikara , S. Parkin , L. E. DeLong , P. Schlottmann , G. Cao

Recent theoretical studies employing density-functional theory have predicted BaBiO$_{3}$ (when doped with electrons) and YBiO$_{3}$ to become a topological insulator (TI) with a large topological gap (~ 0.7 eV). This, together with the…

材料科学 · 物理学 2015-05-28 Gang Li , Binghai Yan , Ronny Thomale , Werner Hanke

The recent proposal of antidoping scheme breaks new ground in conceiving conversely functional materials and devices, yet the few available examples belong to the correlated electron systems. Here we demonstrate both theoretically and…

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which…

The unique surface edge states make topological insulators a primary focus among different applications. In this article, we synthesized a large single crystal of Niobium(Nb)-doped Bi2Se3 topological insulator (TI) with a formula…

材料科学 · 物理学 2020-07-01 Prince Sharma1 , M. M Sharma , Mahesh Kumar , V. P. S Awana

We report the thermoelectric properties (Seebeck coefficient, thermal conductivity, and electrical resistivity) of lightly doped single crystals of (001)-oriented SrTiO3 (STO). Hall effect measurements show that electron doping around 10^-5…

强关联电子 · 物理学 2012-11-08 P. L. Bach , V. Leborán , V. Pardo , A. S. Botana , D. Baldomir , F. Rivadulla

One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively…

强关联电子 · 物理学 2021-07-13 S. Hameed , J. Joe , D. M. Gautreau , J. W. Freeland , T. Birol , M. Greven

The isotropic, non-magnetic doped BaBiO$_3$ superconductors maintain some similarities to high-Tc cuprates, while also providing a cleaner system for isolating charge density wave (CDW) physics that commonly competes with superconductivity.…

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states…

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface…

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…

材料科学 · 物理学 2020-02-12 Jisoo Moon , Zengle Huang , Weida Wu , Seongshik Oh

The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due…

介观与纳米尺度物理 · 物理学 2021-02-18 Shaham Jafarpisheh , An Ju , Kevin Janßen , Takashi Taniguchi , Kenji Watanabe , Christoph Stampfer , Bernd Beschoten

Bulk n-type SrTiO3 (STO) has long been known to possess a superconducting ground state at an exceptionally dilute carrier density. This has raised questions about the applicability of the BCS-Eliashberg paradigm with its underlying…

超导电性 · 物理学 2025-03-14 Minwoo Park , Suk Bum Chung

We use first-principles methods to study doped strong ferroelectrics (taking BaTiO$_3$ as a prototype). Here we find a strong coupling between itinerant electrons and soft polar phonons in doped BaTiO$_3$, contrary to Anderson/Blount's…

材料科学 · 物理学 2021-04-21 Jiaji Ma , Ruihan Yang , Hanghui Chen

Effects of electron doping on the BiS$_2$-based superconductors Sr$_{1-x}$La$_x$FBiS$_2$ ($0\le x\le 0.6$) have been investigated using the systematically synthesized polycrystals. The pristine compound is a band insulator with the BiS$_2$…

超导电性 · 物理学 2015-06-18 H. Sakai , D. Kotajima , K. Saito , H. Wadati , Y. Wakisaka , M. Mizumaki , K. Nitta , Y. Tokura , S. Ishiwata
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