相关论文: Ferroelectrically Switchable Half-Quantized Hall E…
The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in…
In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric…
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…
The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent…
The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895…
Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic…
Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4 has been demonstrated to be an intrinsic magnetic…
Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit…
The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic…
We theoretically show that the three-dimensional (3D) topological insulator (TI)/thin-film ferromagnetic metal (FMM) bilayer structure is possible to be a quantum anomalous Hall (QAH) insulator with a wide global band gap. Studying the band…
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…
Materials combining electrically switchable ferroelectricity and tunable topological states hold significant promise for advancing both foundamental quantum phenomena and innovative device architectures. Here, we employ first-principles…
The magnetic topological insulator MnBi$_{6}$Te$_{10}$ has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects.…
Van der Waals (vdW) assembly could efficiently modulate the symmetry of two-dimensional (2D) materials that ultimately governs their physical properties. Of particular interest is the ferroelectric polarization being introduced by proper…
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose.…
Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $\alpha$-In$_2$Se$_3$…
The classic Thouless-Kohmoto-Nightingale-Nijs theorem dictates that a single electron band of a lattice can only harbor an integer quantum Hall conductance as a multiple of e^2/2h, while recent studies have pointed to the emergence of half…
The quantum geometric structure of electrons introduces fundamental insights into understanding quantum effects in materials. One notable manifestation is the non-linear Hall effect (NLHE), which has drawn considerable interest for its…
The layered van der Waals (vdW) material MnBi$_2$Te$_4$ is an intrinsic magnetic topological insulator with various topological phases such as quantum anomalous Hall effect (QAHE) and axion states. However, both the zero-field and…