相关论文: Twist-Tunable Spin-to-Charge Conversion and Valley…
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocal-ization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using…
Proximity orbital and spin-orbital effects of graphene on monolayer transition-metal dichalcogenides (TMDCs) are investigated from first-principles. The Dirac band structure of graphene is found to lie within the semiconducting gap of TMDCs…
Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted…
Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i)…
Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably,…
The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance…
Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian…
Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling,…
We theoretically study the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides monolayer stacked with arbitrary twist angles. We find that the relative rotation greatly enhances the spin splitting of graphene,…
When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its band structure develops rich spin textures due to proximity spin-orbital effects with interfacial breaking of inversion symmetry. In this…
Depositing monolayer graphene on a transition metal dichalcogenide (TMD) semiconductor substrate has been shown to change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects.…
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins…
van der Waals heterostructures assembled from atomically thin crystals are ideal model systems to study spin-orbital coupled transport because they exhibit a strong interplay between spin, lattice and valley degrees of freedom that can be…
Based on a Dirac-like Hamiltonian and coherent scattering formalism, we study spin-valley transport and Goos-H\"{a}nchen like (GHL) effect of transmitted and reflected electrons in a gated monolayer WS$_2$. Our results show that the lateral…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…
The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as…
Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse…
The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are…