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Increasing resistivity of metal wires with reducing nanoscale dimensions is a major performance bottleneck of semiconductor computing technologies. We show that metals with suitably anisotropic Fermi velocity distributions can strongly…

There is considerable recent interest in the phenomenon of anisotropic electroresistivity of correlated metals. While some interesting work has been done on the iron-based superconducting systems, not much is known for the cuprate…

强关联电子 · 物理学 2020-07-01 Michael Arciniaga , Peizhi Mai , B Sriram Shastry

Considerable progress has been made over the last decade in understanding the phenomenological properties of the cuprate high-T$_{c}$ superconductors and in producing well characterized high quality materials. Nevertheless, the pairing…

超导电性 · 物理学 2009-10-31 T. Schneider , J. M. Singer

Complexions are phase-like interfacial features that can influence a wide variety of properties, but the ability to predict which material systems can sustain these features remains limited. Amorphous complexions are of particular interest…

材料科学 · 物理学 2017-08-22 Jennifer D. Schuler , Timothy J. Rupert

Initially identified as a promising altermagnetic (AM) candidate, rutile RuO$_2$ has since become embroiled in controversy due to contradictory findings of modeling and measurements of the magnetic properties of bulk crystals and thin…

Whether diffuse mismatch model for electrons (DMMe) hold true in more general cases remains largely unexplored, especially in cases where at least one material does not behave like a free-electron metal and/or the interface is smooth enough…

材料科学 · 物理学 2023-11-21 Dian Li , Joseph Feser

We study the effect of interface disorder on the spin-dependent interface resistances of Co/Cu, Fe/Cr and Au/Ag multilayers using a newly developed method for calculating transmission matrices from first-principles. The efficient…

材料科学 · 物理学 2009-10-31 K. Xia , P. J. Kelly , G. E. W. Bauer , I. Turek , J. Kudrnovský , V. Drchal

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…

强关联电子 · 物理学 2008-02-03 V. M. Pudalov

The influence of electronic structure evolution upon pressure on the temperature dependencies of electrical resistivity of pure Np, Pu, Am, and Cm metals have been investigated within coherent potential approximation (CPA) for many-bands…

The identification of alternatives to the Lithium-ion battery architecture remains a crucial priority in the diversification of energy storage technologies. Accompanied by the low reduction potential of $\mathrm{Ca^{2+}/Ca}$, -2.87 V vs.…

材料科学 · 物理学 2021-07-29 Wang Lu , Juefan Wang , Gopalakrishnan Sai Gautam , Pieremanuele Canepa

A comprehensive theoretical and experimental study is presented of the magnetic susceptibility versus temperature \chi(T) of spin S = 1/2 two- and three-leg Heisenberg ladders and ladder oxide compounds. Extensive quantum Monte Carlo…

We investigate the electronic structure, dielectric and optical properties of bismuth tellurohalides BiTeX (X = I, Cl, Br) by means of all-electron density functional theory. In particular, we present the ab initio conductivities and…

计算物理 · 物理学 2016-11-23 Sebastian Schwalbe , René Wirnata , Ronald Starke , Giulio A. H. Schober , Jens Kortus

We report magnetic and inter-plane transport properties of Ca3Ru2O7 at high magnetic fields and low temperatures. Ca3Ru2O7 with a bilayered orthorhombic structure is a Mott-like system with a narrow charge gap of 0.1eV. Of a host of unusual…

强关联电子 · 物理学 2009-11-10 G. Cao , L. Balicas , Y. Xin , J. E. Crow , C. S. Nelson

The quest to improve transparent conductors balances two key goals: increasing electrical conductivity and increasing optical transparency. To improve both simultaneously is hindered by the physical limitation that good metals with high…

Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…

介观与纳米尺度物理 · 物理学 2015-06-25 Aniruddha Konar , John Mathew , Kaushik. Nayak , Mohit. Bajaj , Rajan K. Pandey , Sajal Dhara , K. V. R. M. Murali , Mandar Deshmukh

Experimental realization of two-dimensional boron sheets was reported very recently by Feng et. al. using molecular beam epitaxy on silver (111) surface. These boron sheets possess promising electronic and transport properties. We performed…

介观与纳米尺度物理 · 物理学 2018-10-17 Vivekanand Shukla , Anton Grigoriev , Naresh K. Jena , Rajeev Ahuja

The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…

介观与纳米尺度物理 · 物理学 2019-02-15 Wushi Dong , Peter B. Littlewood

The electronic structures of four semiconductor compounds BaCu2S2, BaCu2Se2, BaAg2S2, and BaAg2Se2 are studied by density functional theory using both semi-local and hybrid functionals. The ionization energies and electron affinities were…

材料科学 · 物理学 2013-09-13 Aditi Krishnapriyan , Phillip T. Barton , Maosheng Miao , Ram Seshadri

We probe spin transport in Cu_{2}O by measuring spin valve effect in La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co and La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxial heterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we…

介观与纳米尺度物理 · 物理学 2010-04-21 I. Pallecchi , L. Pellegrino , N. Banerjee , M. Cantoni , A. Gadaleta , A. S. Siri , D. Marré

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional…

介观与纳米尺度物理 · 物理学 2025-02-06 Gaëlle Bigeard , Zineb Kerrami , François Triozon , Alessandro Cresti
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