中文
相关论文

相关论文: Threshold Switching in Vertically Aligned MoS${_2}…

200 篇论文

Novel materials with nontrivial electronic and photonic band topology are crucial for realizing novel devices with low power consumption and heat dissipation, and quantum computing free of decoherence. Here using first-principles approach,…

材料科学 · 物理学 2017-01-18 Junwei Liu , Hua Wang , Chen Fang , Liang Fu , Xiaofeng Qian

Two-dimensional van der Waals (2D vdW) materials that display ferromagnetism and piezoelectricity have received increased attention. Despite numerous 2D materials have so far been reported as ferromagnetic, developing an air stable and…

材料科学 · 物理学 2022-05-04 Kayahan Saritas , Nassar Doudin , Eric I. Altman , Sohrab Ismail-Beigi

Despite progress in HfO2 thin-film ferroelectrics, issues like high coercive fields persist, and the dynamics of twisted ferroelectricity remain largely unexplored. Here, we explore how sliding and twisting in bilayer HfO2 enables low…

材料科学 · 物理学 2025-12-05 Jie Sun , Yiheng Shen , Tengfei Cao , Li-Min Liu

Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical,…

In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose…

Hybrid quantum dot (QD) / transition metal dichalcogenide (TMD) heterostructures are attractive components of next generation optoelectronic devices, which take advantage of the spectral tunability of QDs and the charge and exciton…

材料科学 · 物理学 2018-07-18 Aaron J. Goodman , Nabeel S. Dahod , William A. Tisdale

The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallization phenomenon. It was shown, however, that resistive…

介观与纳米尺度物理 · 物理学 2023-06-12 Anna Nyáry , Zoltán Balogh , Máté Vigh , Botond Sánta , László Pósa , András Halbritter

Developing efficient, fast performing and thermally stable Silver iodide based fast ion conducting solids are of great interest for resistive switching applications, but still remain challenges. Metallization in bulk, behavior of threshold…

材料科学 · 物理学 2019-06-20 B. Tanujit , G. Sreevidya Varma , S. Asokan

We have systematically investigated the structural property and electrical structures of the transition metal intercalated titanium disulfide compound Fe$_x$TiS$_2$ ($0\leq x\leq0.33$) from angle-resolved photoelectron spectroscopy with…

材料科学 · 物理学 2010-08-25 X. Y. Cui , H. Negishi , A. N. Titov , S. G. Titova , M. Shi , L. Patthey

Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS),…

Two-dimensional transition metal dichalcogenides (TMDs) are highly promising candidates for various applications due to their unique electrical, optical, mechanical, and chemical properties. Furthermore, heterostructures consisting of TMDs…

材料科学 · 物理学 2024-04-22 Jemal Yimer Damte , Jiri Houskaa

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…

This article explores the recent advancements in atomically thin two-dimensional transition metal dichalcogenides (2D TMDs) and their potential applications in various fields, including nanoelectronics, photonics, sensing, energy storage,…

材料科学 · 物理学 2025-09-17 Mitesh B. Solanki , Margi Jani

Transition-metal dichalcogenides (TMDs) are layered compounds that support many electronic phases, including various charge density waves, superconducting, and Mott insulating states. Their intercalation with magnetic ions introduces…

The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD…

The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive…

介观与纳米尺度物理 · 物理学 2013-01-16 Jun Yao , Lin Zhong , Douglas Natelson , James M. Tour

We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…

强关联电子 · 物理学 2009-10-31 V. M. Pudalov , G. Brunthaler , A. Prinz , G. Bauer

Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected…

A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory…

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here we predict an extremely large resistance switching based on the relative spin-orbit splitting in twisted transition metal…

介观与纳米尺度物理 · 物理学 2023-11-15 Marc Vila