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相关论文: Efficient spin filtering through Fe$_4$GeTe$_2$-ba…

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We theoretically demonstrate a gate-tunable superconducting spin valve effect (SVE) in a van der Waals (vdW) heterostructure composed of a monolayer superconductor (S) sandwiched between two ferromagnetic (F) monolayers (F/S/F). By…

超导电性 · 物理学 2025-12-11 A. S. Ianovskaia , G. A. Bobkov , A. M. Bobkov , I. V. Bobkova

Effectively tuning magnetic state by using current is essential for novel spintronic devices. Magnetic van der Waals (vdW) materials have shown superior properties for the applications of magnetic information storage based on the efficient…

材料科学 · 物理学 2025-09-30 Shaohua Yan , Shangjie Tian , Yang Fu , Fanyu Meng , Zhiteng Li , Hechang Lei , Shouguo Wang , Xiao Zhang

Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has…

The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…

介观与纳米尺度物理 · 物理学 2025-12-04 Xiaolin Ren , Ruizi Liu , Yiyang Zhang , Yuting Liu , Xuezhao Wu , Kun Qian , Kenji Watanabe , Takashi Taniguchi , Qiming Shao

The control of spin current is pivotal for spintronic applications, especially for spin-orbit torque devices. Spin Hall effect (SHE) is a prevalent method to generate spin current. However, it is difficult to manipulate its spin…

计算物理 · 物理学 2021-11-30 Jiaqi Zhou , Jean-Christophe Charlier

The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and driving force behind recent advances in van der Waals (vdW)…

介观与纳米尺度物理 · 物理学 2019-10-14 Anamul Md. Hoque , Dmitrii Khokhriakov , Bogdan Karpiak , Saroj P. Dash

We investigate the impact of mechanical strain, stacking order, and external electric fields on the magnetic interactions of a two-dimensional (2D) van der Waals (vdW) heterostructure in which a 2D ferromagnetic metallic Fe$_3$GeTe$_2$…

材料科学 · 物理学 2023-03-30 Dongzhe Li , Soumyajyoti Haldar , Tim Drevelow , Stefan Heinze

The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based…

介观与纳米尺度物理 · 物理学 2021-01-04 S. Omar , M. Gurram , K. Watanabe , T. Taniguchi , M. H. D. Guimarães , B. J. van Wees

Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide…

介观与纳米尺度物理 · 物理学 2017-09-26 Yuji Yamasaki , Rai Moriya , Miho Arai , Satoru Masubuchi , Sunseng Pyon , Tsuyoshi Tamegai , Keiji Ueno , Tomoki Machida

Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them…

Weyl semimetals, such as $TaIrTe_{4}$, characterized by their unique band structures and exotic transport phenomena, have become a central focus in modern electronics. Despite extensive research, a systematic understanding of the impact of…

材料科学 · 物理学 2024-11-26 Longfei Guo , Shaowen Xu , Qilong Cui , Qingmin Hu , Ruixue Li , Gaofeng Xu , Fanhao Jia , Yuan Li

We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe…

介观与纳米尺度物理 · 物理学 2019-04-03 A. Kononov , O. O. Shvetsov , A. V. Timonina , N. N. Kolesnikov , E. V. Deviatov

We have studied the magnetic properties of quasi two-dimensional itinerant ferromagnet Fe$_4$GeTe$_2$ as functions of temperature and magnetic field ($B$) with field parallel to the $ab$-plane ($B\|ab$) and $c$-axis ($B\|c$) of the crystal.…

强关联电子 · 物理学 2022-07-21 Suchanda Mondal , Prabhat Mandal

Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting…

Fe$_3$GaTe$_2$, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature…

The advent of altermagnetism, a new phase of magnetism, has garnered significant interest due to its extraordinary spin-polarized electronic bands despite zero net magnetization. Such spin-symmetry-guided robust non-relativistic alternating…

材料科学 · 物理学 2025-04-15 Anil Kumar Singh , Pritam Deb

Two-dimensional (2D) materials are promising candidates for spintronic applications. Maintaining their atomically smooth interfaces during integration of ferromagnetic (FM) electrodes is crucial since conventional metal deposition tends to…

介观与纳米尺度物理 · 物理学 2024-05-14 Zhongzhong Luo , Zhihao Yu , Xiangqian Lu , Wei Niu , Yao Yu , Yu Yao , Fuguo Tian , Chee Leong Tan , Huabin Sun , Li Gao , Wei Qin , Yong Xu , Qiang Zhao , Xiang-Xiang Song

Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly expected to build the spin-valve heterojunction.…

介观与纳米尺度物理 · 物理学 2023-02-15 Wen Jin , Gaojie Zhang , Hao Wu , Li Yang , Wenfeng Zhang , Haixin Chang

The crystallographic, magnetic, and transport properties of the van der Waals bonded, layered compound CrTe3 have been investigated on single crystal and polycrystalline materials. The crystal structure contains layers made up of lozenge…

Efforts to achieve efficient injection of spin-polarized electrons into a semiconductor, a key prerequisite for developing electronics that exploit the electron's spin degree of freedom, have so far met with limited success. Here we report…

介观与纳米尺度物理 · 物理学 2015-06-12 Sarmita Majumder , Bartek Kardasz , George Kirczenow , Anthony SpringThorpe , Karen L. Kavanagh