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相关论文: A Framework for Understanding Colossal Magnetoresi…

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In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional…

Recent reports of colossal negative magnetoresistance (CMR) in a few magnetic semimetals and semiconductors have attracted attention, because these materials are devoid of the conventional mechanisms of CMR such as mixed valence, double…

The ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$ exhibits colossal magnetoresistance (CMR) owing to the chiral orbital currents (COC). The COC is developed due to spin-orbit interaction (SOI) attributed to the tellurium (Te)…

材料科学 · 物理学 2025-02-13 Arnab Das , Soumik Mukhopadhyay

Colossal magnetoresistance (CMR) is an extraordinary enhancement of the electric conductivity in the presence of a magnetic field. It is conventionally associated with a field-induced spin polarization, which drastically reduces spin…

强关联电子 · 物理学 2022-10-17 Yu Zhang , Yifei Ni , Hengdi Zhao , Sami Hakani , Feng Ye , Lance DeLong , Itamar Kimchi , Gang Cao

The ferrimagnetic insulator Mn3Si2Te6, which features a Curie temperature Tc at 78 K and a delicate yet consequential magnetic frustration, exhibits colossal magnetoresistance (CMR) when the magnetic field is applied along the magnetic hard…

强关联电子 · 物理学 2022-11-02 Feng Ye , Masaaki Matsuda , Zachary Morgan , Todd Sherline , Yifei Ni , Hengdi Zhao , G. Cao

Colossal magnetoresistance (MR) is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. Though topological semimetals also…

Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation…

强关联电子 · 物理学 2012-07-05 E. J. Wildman , J. M. S. Skakle , N. Emery , A. C. Mclaughlin

Colossal magnetoresistance (CMR) refers to a large change in electrical conductivity induced by a magnetic field in the vicinity of a metal-insulator transition and has inspired extensive studies for decades\cite{Ramirez1997, Tokura2006}.…

材料科学 · 物理学 2018-08-01 Zhiyong Qiu , Dazhi Hou , Joseph Barker , Kei Yamamoto , Olena Gomonay , Eiji Saitoh

Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or…

介观与纳米尺度物理 · 物理学 2023-11-28 Yiwen Zhang , Bo Xie , Yue Yang , Yueshen Wu , Xin Lu , Yuxiong Hu , Yifan Ding , Jiadian He , Peng Dong , Jinghui Wang , Xiang Zhou , Jianpeng Liu , Zhu-Jun Wang , Jun Li

Recent experiments suggest a new paradigm towards novel colossal magnetoresistance (CMR) in a family of materials EuM$_2$X$_2$(M=Cd, In, Zn; X=P, As), distinct from the traditional avenues involving Kondo-RKKY crossovers, magnetic phase…

With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, driven by their relatively scarce occurrence compared to…

材料科学 · 物理学 2025-02-27 Suman Kalyan Pradhan , Weiqi Liu , Jicheng Wang , Yongli Yu , Wenxing Chen , Jinbo Yang , Yanglong Hou , Rui Wu

Colossal magnetoresistance (CMR) is associated with the phase transition from a metallic ferromagnetic to insulating paramagnetic phase, which can be controlled by an applied magnetic field. The insulating phase occurs due to trapping of…

材料科学 · 物理学 2013-12-16 F. Weber , D. Argyriou , O. Prokhnenko , D. Reznik

The gigantic decrease of resistance by an applied magnetic field, which is often referred to as colossal magnetoresistance (CMR), has been an attracting phenomenon in strongly correlated electron systems. The discovery of CMR in manganese…

强关联电子 · 物理学 2019-09-25 S. Yamada , N. Abe , H. Sagayama , K. Ogawa , T. Yamagami , T. Arima

Colossal magnetoresistance (CMR) is a fascinating quantum phenomenon that continues to draw significant interest in condensed matter physics. Mn3Si2Te6 has emerged as a prototypical CMR material, notable for its puzzling magnetoresistance…

In the ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$, colossal magnetoresistance (CMR) arises below $T_\mathrm{c}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with…

We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is…

强关联电子 · 物理学 2018-02-14 M. Zhu , J. Peng , T. Zou , K. Prokes , S. D. Mahanti , T. Hong , Z. Q. Mao , G. Q. Liu , X. Ke

Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low…

材料科学 · 物理学 2022-03-24 Rui Niu , W. K. Zhu

Electronic anisotropy (or `nematicity') has been detected in all main families of cuprate superconductors by a range of experimental techniques -- electronic Raman scattering, THz dichroism, thermal conductivity, torque magnetometry,…

超导电性 · 物理学 2023-08-22 Jonatan Wårdh , Mats Granath , Jie Wu , A. T. Bollinger , Xi He , Ivan Božović

Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…

材料科学 · 物理学 2020-08-12 Dongzhe Li , Fabian Pauly , Alexander Smogunov

We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The im- portant aspect of this discovery is that the system must have a…

材料科学 · 物理学 2010-08-02 T. H. Hewett , F. V. Kusmartsev
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