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Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…

Hafnia (HfO2) is a promising material for emerging chip applications due to its high-k dielectric behaviour, suitability for negative capacitance heterostructures, scalable ferroelectricity, and silicon compatibility. The lattice dynamics…

Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have…

Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice…

Ferroelectricity in sputtered undoped-HfO$_2$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO$_2$, evolution of ferroelectricity with annealing and film thickness effect…

Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching…

新兴技术 · 计算机科学 2024-12-18 Armin Gooran-Shoorakchaly , Sarah Sharif , Yaser Banad

Very recently there was a report of the discovery using piezoelectric force microscopy (PFM) of a switchable ferroelectric polarization in 1.6 % tensile strained TiO2 thin film with anatase crystal structure (see N. Deepak et al. Adv.…

A newly developed fast molecular-dynamics method is applied to BaTiO3 ferroelectric thin-film capacitors with short-circuited electrodes or under applied voltage. The molecular-dynamics simulations based on a first-principles effective…

材料科学 · 物理学 2009-12-17 Takeshi Nishimatsu , Umesh V. Waghmare , Yoshiyuki Kawazoe , David Vanderbilt

We investigate a series of liquid-crystalline phthalocyanines (metal-free and Cu, Zn, Ni, Co complexes) by correlating their vibrational signatures with their electronic performance in organic thin-film transistors (OTFTs). Raman…

The monolithic integration of electromechanical transduction at the nanoscale with advanced CMOS is among the most important challenges of semiconductor electronic systems to leverage the multi-domain sensing, actuation, and resonance…

介观与纳米尺度物理 · 物理学 2019-10-11 Mayur Ghatge , Glen Walters , Toshikazu Nishida , Roozbeh Tabrizian

We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film…

介观与纳米尺度物理 · 物理学 2015-06-23 R. Samnakay , C. Jiang , S. L. Rumyantsev , M. S. Shur , A. A. Balandin

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and fast and reliable switching are attractive for non-volatile memory and as synaptic weight elements. However, low thermal budget ferroelectric…

应用物理 · 物理学 2024-12-17 Padma Srivari , Ella Paasio , Xinye Li , Sayani Majumdar

Ferroelectric memories experienced a revival in the last decade due to the discovery of ferroelectricity in HfO$_2$-based nanometer-thick thin films. These films exhibit exceptional silicon compatibility, overcoming the scaling and…

材料科学 · 物理学 2024-08-27 Tianyuan Zhu , Shiqing Deng , Shi Liu

Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, and high theoretical thermal conductivity. However,…

Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities…

材料科学 · 物理学 2023-02-24 Sayani Majumdar , Ioannis Zeimpekis

We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…

We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale…

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor…

Hydrogen fuel cells offer a clean and sustainable energy conversion solution. The bipolar separator plate, a critical component in fuel cells, plays a vital role in preventing reactant gas cross-contamination and facilitating efficient ion…

材料科学 · 物理学 2023-08-31 Taemin Ahn , Tae-Hwan Kim

We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated…

介观与纳米尺度物理 · 物理学 2015-06-03 J. Khan , C. M. Nolen , D. Teweldebrhan , D. Wickramaratne , R. K. Lake , A. A. Balandin