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Silicon photonic integrated circuit (PIC) builds on the demand for a low cost approach from established silicon-based manufacturing infrastructure traditionally built for electronics. Besides its natural abundance, silicon has desirable…

应用物理 · 物理学 2024-05-06 James Y. S. Tan , Shawn Xie Wu , Salih Yanikgonul , Chao Li , Patrick Guo-Qiang Lo

Colour centres in silicon have great potential as single photon sources for quantum technologies. Some of them - like the T centre - also possess optically-active spins that enable spin-photon interfaces for generating entangled photons and…

The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing,…

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $\mu$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs).…

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive…

As silicon photonics transitions from research to commercial deployment, packaging solutions that efficiently couple light into highly-compact and functional sub-micron silicon waveguides are imperative but remain challenging. The 220 nm…

The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This…

光学 · 物理学 2015-06-16 Yoon Ho Daniel Lee , Michael O. Thompson , Michal Lipson

Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow…

Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…

材料科学 · 物理学 2026-03-31 Y. Abdedou , A. Fuchs , P. Fuchs , J. Heiler , D. Herrmann , S. Weber , M. Schäfer , J. L'huillier , F. Kaiser , C. Becher , E. Neu

Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate…

Silicon-on-chip (SOI) photonic circuit is the most promising platform for scalable quantum information technology for its low loss, small footprint, CMOS-compatible and telecom communications techniques compatible. Multiple multiplexed…

We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. The color center consists of a single W center, created at a…

Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are…

Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate…

Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…

We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is…

Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as…

量子物理 · 物理学 2024-06-19 Sridhar Majety , Pranta Saha , Victoria A. Norman , Marina Radulaski

The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…

Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many…

Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain…

光学 · 物理学 2024-09-05 Z. He , B. Chen , Y. Hua , Z. Liu , Y. Wei , S. Liu , A. Hu , X. Shen , Y. Zhang , Y. Gao , J. Liu
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