相关论文: Dislocation correlations in GaN epitaxial films re…
The coalescence in dense arrays of spontaneously formed GaN nanowires proceeds by bundling: adjacent nanowires bend and merge at their top, thus reducing their surface energy at the expense of the elastic energy of bending. We give a…
Next-generation, atomically thin devices require in-plane, one-dimensional heterojunctions to electrically connect different two-dimensional (2D) materials. However, the lattice mismatch between most 2D materials leads to unavoidable…
The Kikuchi bands arise from Bragg diffraction of incoherent electrons scattered within a crystalline specimen and can be observed in both the transmission and reflection modes of scanning electron microscopy (SEM). Converging, rocking, or…
Dislocations are line defects in crystals that multiply and self-organize into a complex network during strain hardening. The length of dislocation links, connecting neighboring nodes within this network, contains crucial information about…
In metals geometrically necessary dislocations (GNDs) are generated primarily to accommodate strain gradients and they play a key role in the Bauschinger effect, strain hardening, micron-scale size effects and fatigue. During bending large…
The effect of edge-type dislocation wall strain field on the Hall mobility in n-type epitaxial GaN was theoretically investigated through deformation potential within the relaxation time approach. It was found that this channel of…
Elastic interactions play an important role in controlling irradiation damage evolution, but remain largely unexplored experimentally. Using transmission electron microscopy (TEM) and high-resolution on-axis transmission Kikuchi diffraction…
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both…
In this paper spatial correlations of parallel edge dislocations are studied. After closing a hierarchy of equations for the many-particle density functions by the Kirkwood superposition approximation, we derive evolution equations for the…
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in…
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semiconductors (Si)GeSn. In addition to its importance for emerging…
The full lattice strain tensor and lattice rotations induced by a dislocation in pure tungsten were mapped using high-resolution transmission Kikuchi diffraction (HR-TKD) in a SEM. The HR-TKD measurement agrees very well with a forward…
We prepared Ga0.95Mn0.05As films on top of periodic arrays of InAs quantum dots. X-ray diffraction reveals periodically strained films, commensurate to substrate's patterning. The dots produce a tensile strain in GaMnAs while between the…
Using _in situ_ transmission electron microscopy (TEM), we have observed nanometre scale dislocation loops formed when an ultra-high-purity tungsten foil is irradiated with a very low fluence of self-ions. Analysis of the TEM images has…
In this letter, we introduce a geometric model to explain the origin of the observed shallow levels in semiconductors threaded by a dislocation density. We show that a uniform distribution of screw dislocations acts as an effective uniform…
This study introduces the Reciprocal Space Polar Visualization (RSPV) method, a novel approach for visualizing X-ray diffraction-based reciprocal space data. RSPV allows for the precise separation of tilt and strain, facilitating their…
The strain-relaxation mechanism of a set of Si$_{0.6}$Ge$_{0.4}$ linearly graded buffers (LGBs), grown following different temperature profiles, has been investigated by means of defect-etching and variable-temperature high-resolution X-ray…
Understanding plastic deformation of crystals in terms of the fundamental physics of dislocations has remained a grand challenge in materials science for decades. To overcome this, the Discrete Dislocation Dynamics (DDD) method has been…
Efficient thermal management is essential for the reliability of modern power electronics, where increasing device density leads to severe heat dissipation challenges. However, in thin-film systems, thermal transport is often compromised by…
(a+c) dislocations in hexagonal materials are typically observed to be dissociated into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconductor layers by the process of plastic relaxation. As there is…