相关论文: Unveiling the effect of adding B4C at the W-on-Si …
Arranged patterns obtained by ultrafast laser processing on the surface of Ti/Cu/Ti/Si and Ti/Zr/Ti/Si thin film systems are reported. Two differently designed multilayer thin films, Ti/Cu/Ti/Si and Ti/Zr/Ti/Si, were deposited on silicon by…
This work discusses an extension to conventional low-coherence interferometry by the introduction of dispersion-encoding. The extension facilitates the measurement of surface height profiles with sub-nm resolution. The selection of a…
Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…
Reconfigurable intelligent surface (RIS)-aided wireless communications have drawn significant attention recently. We study the physical layer security of the downlink RIS-aided transmission framework for randomly located users in the…
The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections…
Titanium silicide is a key contact material in advanced three-dimensional semiconductor device architectures. Here, we examine the formation of ultrathin Ti-silicide on Si(100) using a combination of non-destructive in-situ and ex-situ ion…
The analysis of x-ray reflectivity data from artificial heterostructures usually relies on the homogeneity of optical properties of the constituent materials. However, when the x-ray energy is tuned to an absorption edge, this homogeneity…
The SIS structure---a thin superconducting film on a bulk superconductor separated by a thin insulating film---was propsed as a method to protect alternative SRF materials from flux penetration by enhancing the first critical field…
By the use of both perturbative and non-perturbative solutions of the reduced Rayleigh equation, we present a detailed study of the scattering of light from two-dimensional weakly rough dielectric films. It is shown that for several rough…
The k-projection method provides an approach to separate the contributions from different constituents in heterostructure systems and can act as an aid to connect the results of experiments and calculations. We show that the technique can…
Highly ambitious initiatives aspire to propel a miniature spacecraft to a neighboring star within a human generation, leveraging the radiation pressure of lasers for propulsion. One of the main challenges to achieving this enormous feat is…
The theory of superconductivity in thin SN sandwiches (bilayers) in the diffusive limit is developed within the standard Usadel equation method, with particular emphasis on the case of very thin superconductive layers, d_S << d_N. The…
With regard to the implementation of WiFi sensing agnostic according to the availability of channel state information (CSI), we investigate the possibility of estimating a CSI matrix based on its compressed version, which is known as…
W-SiC composite material is a promising plasma-facing material candidate alternative to pure W due to the low neutron activation, low impurity radiation, and low tritium diffusivity of SiC while leveraging the high erosion resistance of the…
Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction…
Temperature dependence of far-infrared transmission of NbN thin films deposited on MgO and Si substrates was measured at several frequencies from 0.4 up to 4.3 THz. Exponential increase of relative penetration depth at low temperatures and…
High-k oxides such as SrTiO3 promise large capacitance, but their dielectric response is often limited by leakage currents due to reduced bandgaps. We show that introducing a thin barrier layer beneath SrTiO3 is a simple and effective way…
Silicon thin films for coverages ($\theta$) between 0.3 and 3 monolayers have been grown on rutile \ce{TiO2}(110)-(1x1) at room temperature and studied by x-ray and ultra-violet photoelectron spectroscopies, Auger electron spectroscopy, and…
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional…
Vertically stacked heterojunctions have garnered significant attention for their tunable electronic structures and photocatalytic performance, making them promising candidates for next-generation nanodevices. Using first-principles…