相关论文: Imaging van Hove Singularity Heterogeneity in Over…

We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also known as van Hove singularities where the density of states…

Graphene has attracted increasing interests due to its remarkable properties, however, the zero band gap of monolayer graphene might limit its further electronic and optoelectronic applications. Herein, we have successfully synthesized…

In the large family of two-dimensional (2D) layered materials including graphene, its honeycomb analogs, and transition-metal dichalcogenides, the interlayer coupling plays a rather intriguing role. On the one hand, the weak van der Waals…

Combining the electronic properties of graphene and molybdenum disulphide (MoS$_2$) monolayers in two-dimensional (2D) ultrathin hybrid nanocomposites have been synthesized experimentally to create excellent electronic, electrochemical,…

A theoretical framework, which is under the first-principles calculations, is developed to fully explore the dramatic changes of essential properties due to the silicon-atom chemical modifications on monolayer graphenes. For the…

Two common difficulties in the design of topological quantum materials are that the desired features lie too far from the Fermi level and are spread over a too-large energy range. Doping-induced states at the Fermi level provide a solution,…

Recent experiments showed that non-uniform strain can be produced by depositing graphene over pillars. We employed atomistic calculations to study the non-uniform strain and the induced pseudo-magnetic field up to 5000 Tesla in graphene on…

Graphene is the only member of the carbon family from zero- to three-dimensional materials for which superconductivity has not been observed yet. At this time, it is not clear whether the quest for superconducting graphene is hindered by…

Electronic states near surface regions can be distinct from bulk states, which are paramount in understanding various physical phenomena occurring at surfaces and in applications in semiconductors, energy, and catalysis. Here, we report an…

We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different…

The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…

The tunneling spectrum of an inhomogeneously doped extended Hubbard model is calculated at the mean field level. Self-consistent solutions admit both superconducting and antiferromagnetic order, which coexist inhomogeneously because of…

We report the observation of spin-polarized superconductivity in Bernal bilayer graphene when doped to a saddle-point van Hove singularity generated by large applied perpendicular electric field. We observe a cascade of electrostatic…

We investigate magic-angle twisted bilayer graphene (MATBG) with proximity-induced Ising and Rashba spin-orbit couplings (SOC) in the top layer, as recently achieved experimentally. Utilizing the Bistritzer-MacDonald model with SOCs, we…

We report a systematic study of the optical conductivity of twisted bilayer graphene (tBLG) across a large energy range (1.2 eV to 5.6 eV) for various twist angles, combined with first-principles calculations. At previously unexplored high…

The vertical integration of multiple two-dimensional (2D) materials in heterostructures, held together by van der Waals forces, has opened unprecedented possibilities for modifying the (opto-)electronic properties of nanodevices. Graphene,…

Motivated by the recent experiments indicating superconductivity in metal-decorated graphene sheets, we investigate their quasi-particle structure within the framework of an effective tight-binding Hamiltonian augmented by appropriate…

Doping is one of the most prominent techniques to alter properties of a given material. Herein, the influence of the electron- and hole-doping on the selected superconducting properties of graphene are considered. In details, the…

Revealing how heteroatom doping alters the local electronic structure of graphene is crucial for understanding and controlling its functional properties. In this study, we combine density functional theory (DFT) and machine learning (ML) to…

Electron doping is an excellent tuning knob to explore different phases of matter in two-dimensional (2D) materials. For example, tuning the Fermi level at a van Hove singularity in twisted bilayer graphene can enhance electron-electron…