相关论文: Stark Shift from Quantum Defects in Hexagonal Boro…
Quantum emitters in hexagonal boron nitride (hBN) have gained significant attention due to a wide range of defects that offer high quantum efficiency and single-photon purity at room temperature. Most theoretical studies on hBN defects…
Negatively charged boron vacancy (VB-) centers in hexagonal boron nitride (hBN) are promising spin defects in a van der Waals crystal. Understanding the spin properties of the excited state (ES) is critical for realizing dynamic nuclear…
Defect centers in hexagonal boron nitride have been extensively studied as room temperature single photon sources. The electronic structure of these defects exhibits strong coupling to phonons, as evidenced by the observation of phonon…
Point defects in hexagonal boron nitride (hBN) are promising candidates as single-photon emitters (SPEs) in nanophotonics and quantum information applications. The precise control of SPEs requires in-depth understanding of their…
Precise control over the electronic and optical properties of defect centers in solid-state materials is necessary for their applications as quantum sensors, transducers, memories, and emitters. In this study, we demonstrate, from first…
Quantum theory is the foundation of modern physics. Some of its basic principles, such as Born's rule, however, are based on postulates which require experimental testing. Any deviation from Born's rule would result in higher-order…
Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy…
The T center in silicon has recently drawn a lot of attention for its potential in quantum information science. The sensitivity of the zero-phonon line (ZPL) to electrical field was recently investigated by a combination of different…
The effects of the tilt of the crystallographic orientation with respect to an incident electron probe on high-angle annular dark field (HAADF) imaging in aberration-corrected scanning transmission electron microscopy (STEM) have been…
The defect-mediated hexagonal boron nitride (hBN) supercell display the visible optical spectra and electronic characteristics. The defects in the hBN supercell include the atomic vacancy, antisite, antisite vacancy, and substitution of a…
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy…
Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects are limited by their interactions with the spin environment in hBN, inefficient…
Some isolated neutron stars show harmonically spaced absorption features in their thermal soft X-ray spectra. The interpretation of the features as a cyclotron line and its harmonics has been suggested, but the usual explanation of the…
Cooperative phenomena stemming from radiation-field-mediated coupling between individual quantum emitters are presently attracting broad interest for on-chip photonic quantum memories and long-range entanglement. Common to these…
The long spin coherence times in ambient conditions of color centers in solids, such as nitrogen-vacancy (NV$^{-}$) centers in diamond, make these systems attractive candidates for quantum sensing. Quantum sensing provides remarkable…
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this…
The experimental identification of optically addressable spin defects in hexagonal boron nitride has opened new possibilities for quantum sensor technologies in two-dimensional materials and structures. Despite numerous fundamental and…
Spin defects in hexagonal Boron Nitride (hBN) attract increasing interest for quantum technology since they represent optically-addressable qubits in a van der Waals material. In particular, negatively-charged boron vacancy centers…
Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have raised wide range interest for its potential in various quantum applications. Due to hBN's 2D nature, spin center in hBN can be engineered in close…
We propose that the carbon dimer defect in hexagonal boron nitride gives rise to the ubiquitous narrow luminescence band with a zero-phonon line of 4.08 eV (usually labeled the 4.1 eV band). Our first-principles calculations are based on…