相关论文: Valley Gapless Semiconductor: Models and Applicati…
The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric…
We present a Poisson/drift-diffusion model that includes valley scattering effects for simulating valley photovoltaic devices. The valley photovoltaic concept is a novel implementation of a hot-carrier solar cell and leverages the valley…
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…
Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…
Some semiconductors have more than one degenerate minimum of the conduction band in their band structure. These minima-known as valleys-can be used for storing and processing information, if it is possible to generate a difference in their…
We investigate a valleytronic device based on graphene with charge separation at different sublattices and correspondingly at nonequivalent valleys. We characterize the maximality condition of valley polarization and investigate the…
Valleytronics, that uses the valley index or valley pseudospin to encode information, has emerged as an interesting field of research in two-dimensional (2D) systems with promising device applications. Spin-orbit coupling (SOC) and…
Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state…
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…
Recent experiments have revealed that novel nonequilibrium states consistent with the hydrodynamic description of electrons are realized in ultrapure graphene, which hosts the valley degrees of freedom. Here, we formulate a theory of…
Underpinning the field of "valleytronics" is the coupling of the helicity of circularly polarized light to the valley degree of freedom, and this remains the only known lightform to exhibit this remarkable effect. Here we show that on…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
It is quite easy to control spin polarization and spin direction of a system via magnetic fields. However, there is no such a direct and efficient way to manipulate valley pseudospin degree of freedom. Here, we demonstrate experimentally…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
Despite many reports of valley-related phenomena in graphene and its multilayers, current transport experiments cannot probe valley phenomena without the application of external fields. Here we propose a gate-defined valley splitter as a…
We propose a scheme to trap and filter electrons, valley dependently, on a scale beyond the diffraction limit, in a gapped Dirac system using a circularly polarized light beam and a microscale metallic resonator. The main mechanism allowing…
We propose a new design on integrated optical devices on-chip with an extra width degree of freedom by using a photonic crystal waveguide with Dirac points between two photonic crystals with opposite valley Chern numbers. With such an extra…
In monolayer group-VI transition metal dichalcogenides (TMDC), charge carriers have spin and valley degrees of freedom, both associated with magnetic moments. On the other hand, the layer degree of freedom in multilayers is associated with…
We discuss valley current, which is carried by quasiparticles in graphene. We show that the valley current arises owing to a peculiar term in the electron-phonon collision integral that mixes the scalar and vector gauge-field-like vertices…