相关论文: Is p-Type Doping in SeO2 Feasible?
We report high performance p-type field-effect transistors based on single layered (thickness, ~0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-{\kappa} gate dielectrics. The top-gated monolayer…
Calcium oxide (CaO) is a promising host for quantum defects because of its ultrawide band gap and potential for long spin coherence times. Using hybrid functional calculations, we investigate the intrinsic point defects and how they limit…
The first principles calculations (GGA) have been applied to study the crystallographic defects in $\alpha$-PbO in order to understand an origin of $n$- and $p$-type conductivity in otherwise undoped $\alpha$-PbO. It was found that…
Superconductivity originates from pairing of electrons. Pairing channel on Fermi surface and pairing glue are thus two pivotal issues for understanding a superconductor. Recently, high-temperature superconductivity over 40 K was found in…
Recent experiments on electron- or hole-doped SrTiO$_{3}$ have revealed a hitherto unknown form of superconductivity, where the Fermi energy of the paired electrons is much lower than the energies of the bosonic excitations thought to be…
Titanium-based oxides are abundant, chemically stable, non-toxic, and highly versatile materials, with applications ranging from photovoltaics to catalysis. For rutile and anatase phases of Titanium dioxide (TiO2), the bandgap ranges from…
Doped band insulators, HfNCl, WO$_3$, diamond, Bi$_2$Se$_3$, \bis2 families, STO/LAO interface, gate doped SrTiO$_3$ and MoS$_2$ etc. are unusual superconductors. With an aim to build a general theory for superconductivity in doped band…
Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes…
The electronic, structural, optical, and thermoelectric properties of the Cs2O cubic structure have been investigated using density functional theory (DFT). The calculations utilize a full relativistic version of the full-potential…
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…
In the iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently it was found that in iron selenide (FeSe), enhanced…
The oxygen dopants are essential in tuning electronic properties of Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_n$O$_{2n+4+\delta}$ superconductors. Here we apply the technique of scanning tunneling microscopy and spectroscopy to study the influence of…
PbSe, a predicted two-dimensional (2D) topological crystalline insulator (TCI) in the monolayer limit, possess excellent thermoelectric and infrared optical properties. Native defects in PbSe take a crucial role for the applications.…
While topological superconductors are predicted to provide building blocks for fault-tolerant quantum computing, one of the remaining challenges is to find a convenient experimental platform that would allow patterning of circuits. We find…
Doping asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type doping because of…
To gain insight into the unconventional superconductivity of Fe-pnictides with no electron pockets, we measure the thermal conductivity $\kappa$ and penetration depth $\lambda$ in the heavily hole-doped regime of…
Two-dimensional (2D) MoS$_2$ has been intensively investigated for its use in the fields of microelectronics, nanoelectronics, and optoelectronics. However, intrinsic 2D MoS$_2$ is usually used as the n-type semiconductor due to the…
Although consensus exists that the thermoelectric properties of doped organic semiconductors result from a complex interplay between a large number of mutually dependent factors, there is no consensus on which of these are dominant, or even…
Modeling the electronic and optical properties of organic semiconductors remains a challenge for theory, despite the remarkable progress achieved in the last three decades. The complexity of these systems, including structural (dis)order…
Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…