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相关论文: Is p-Type Doping in SeO2 Feasible?

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We report the interplay between charge-density-wave (CDW) and superconductivity of 1$T$-Fe$_{x}$Ta$_{1-x}$S$_{2}$ ($0\leq x \leq 0.05$) single crystals. The CDW order is gradually suppressed by Fe-doping, accompanied by the disappearance of…

超导电性 · 物理学 2013-01-11 L. J. Li , W. J. Lu , X. D. Zhu , L. S. Ling , Z. Qu , Y. P. Sun

The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the…

材料科学 · 物理学 2009-11-10 Zeno Gaburro , Claudio J. Oton , Lorenzo Pavesi , Lucio Pancheri

A systematic LSDA+U study of doping effects on the electronic and structural properties of single layer CoO2 is presented. Undoped CoO2 is a charge transfer insulator within LSDA+U and a metal with a high density of states (DOS) at the…

超导电性 · 物理学 2007-05-23 Peihong Zhang , Weidong Luo , Vincent H. Crespi , Marvin L. Cohen , Steven G. Louie

Randomly distributed traps at the MoS$_2$/SiO$_2$ interface result in non-ideal transport behavior, including hysteresis in MoS$_2$/SiO$_2$ field effect transistors (FETs). Thus traps are mostly detrimental to the FET performance but they…

介观与纳米尺度物理 · 物理学 2024-09-06 Santu Prasad Jana , Suraina Gupta , Anjan Kumar Gupta

Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…

Oxygen-deficient amorphous tellurium oxides ($a$-TeO$_x$) have recently challenged the intrinsic hole mobility limits of amorphous oxides, with thin-film transistors reaching mobilities up to 15 cm$^{2}$V$^{-1}$s$^{-1}$ upon Se doping.…

材料科学 · 物理学 2025-10-02 Rafael Costa-Amaral , Yu Kumagai

We theoretically study, through combining the density functional theory and an unfolding technique, the electronic band structure and the charge doping effects for the deposition of potassium (K) on multilayer FeSe films grown on SrTiO3…

介观与纳米尺度物理 · 物理学 2016-02-24 Fawei Zheng , Li-Li Wang , Qi-Kun Xue , Ping Zhang

The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and…

材料科学 · 物理学 2015-05-18 Julia E. Medvedeva , Chaminda L. Hettiarachchi

The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess…

Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through doping or intercalation. In this study, we investigated the…

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures…

Layered tin monoxide (SnO) offers an exciting two-dimensional (2D) semiconducting system with great technological potential for next-generation electronics and photocatalytic applications. Using a combination of first-principles simulations…

材料科学 · 物理学 2022-02-02 Devesh R. Kripalani , Ping-Ping Sun , Pamela Lin , Ming Xue , Kun Zhou

In the iron-based high-Tc bulk superconductors, Tc above 50K was only observed in the electron-doped 1111-type compounds. Here we revisit the electron-doped SmFeAsO polycrystals to make a further investigation for the highest T-c in these…

超导电性 · 物理学 2017-11-16 Xiao-Chuan Wang , Jia Yu , Bin-Bin Ruan , Bo-Jin Pan , Qing-Ge Mu , Tong Liu , Kang Zhao , Gen-Fu Chen , Zhi-An Ren

Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…

介观与纳米尺度物理 · 物理学 2020-09-11 Tomáš Škereň , Sigrun Köster , Bastien Douhard , Claudia Fleischmann , Andreas Fuhrer

Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by…

超导电性 · 物理学 2020-11-02 Jifeng Wu , Chenqiang Hua , Bin Liu , Yanwei Cui , Qinqing Zhu , Guorui Xiao , Siqi Wu , Guanghan Cao , Yunhao Lu , Zhi Ren

Resistive and magnetization properties have been measured in BiS$_2$-based samples CeO$_{1-x}$F$_{x}$BiS$_{2}$ with a systematic substitution of O with F (0 $<$ x $<$ 0.6). In contrast to the band structure calculations, it is found that…

超导电性 · 物理学 2013-01-01 Jie Xing , Sheng Li , Xiaxing Ding , Huang Yang , Hai-Hu Wen

Using a combination of th local-density approximtion (LDA) and dynamicla mean-field theory (DMFT) calculations, we explore the correlated electronic structure of a member of the layered Iron oxychalcogenide Na_{2}Fe_{2}OSe_{2}. We find that…

强关联电子 · 物理学 2013-07-08 Luis Craco , Mukul S. Laad , Stefano Leoni

Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a unique superconducting ground state coexisting with charge-density wave (CDW), whereas how these characteristics are affected by carrier doping remains unexplored because of the lack of an…

The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary…

We report properties of the reported transparent conductor CuI, including the effect of heavy $p$-type doping. The results, based on first principles calculations, include analysis of the electronic structure and calculations of optical and…

材料科学 · 物理学 2018-04-04 Y. Li , J. Sun , D. J. Singh
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