相关论文: Atomic layer etching of SiO$_2$ using sequential S…
Second harmonic (SH) radiation can only be generated in non-centrosymmetric bulk crystals under the electric-dipole approximation. Nonlinear thin films made from bulk crystals are technologically challenging because of complex and high…
A comparative study of polytetrafluoroethylene (PTFE) surfaces treated by the post-discharge of He and He-O2 plasmas at atmospheric pressure is presented. The characterization of treated PTFE surfaces and the species involved in the surface…
Additive manufacturing (AM) processes produce parts with improved physical, chemical, and mechanical properties compared to conventional manufacturing processes. In AM processes, intricate part geometries are produced from multicomponent…
Employing electrons for direct control of nanoscale reaction is highly desirable since it provides fabrication of nanostructures with different properties at atomic resolution and with flexibility of dimension and location. Here, applying…
Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great…
We present an atomistic-continuum model to simulate ultrashort laser-induced melting processes in semiconductor solids on the example of silicon. The kinetics of transient non-equilibrium phase transition mechanisms is addressed with a…
Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser…
We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are…
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic…
We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500 {\deg}C. The pristine thin film was deposited using…
Recent progress in hybrid nanomaterials composed of dissimilar constituents permitted to improve performance and functionality of novel devices developed for optoelectronics, catalysis, medical diagnostic and sensing. However, the rational…
We report plasma-enhanced atomic layer deposition (ALD) to prepare conformal nickel thin films and nanotubes by using nickelocene as a precursor, water as the oxidant agent and an in-cycle plasma enhanced reduction step with hydrogen. The…
Plasma etching is an important tool in nano-device fabrication. We report a study on argon plasma etching of topological insulator materials Bi2Se3, Bi2Te3, Sb2Te3 and Bi2Te2Se using exfoliated flakes (with starting thicknesses of ~100 nm)…
Glass materials play an increasingly important role in advanced technologies due to their superior physical properties. However, precise machining of glass remains a major challenge because of its brittleness and sensitivity to thermal and…
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing. It is, however, not…
We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide…
The amorphous aluminium silicate (Al2O3)2(SiO2) [AS2] is investigated by means of large scale molecular dynamics computer simulations. We consider fully equilibrated melts in the temperature range 6100K >= T >= 2300K as well as glass…
Femtosecond laser-induced alloying presents a novel approach to modifying bimetallic systems. Visualizing ultrafast processes during laser-induced alloying is essential to uncover fundamental mechanisms associated with phase…
In the past decade, nanopores have been developed extensively for various potential applications, and their performance greatly depends on the surface properties of the nanopores. Atomic layer deposition (ALD) is a new technology for…
We present a theoretical study of atomic laser-assisted photoionization emission (LAPE). We consider an atom driven by a linearly polarized XUV laser in two different scenarios: i) a single attosecond pulse (in both the streaking and…