相关论文: Sensing Few Electrons Floating on Helium with High…
We have developed a simulation system for nanoscale high-electron mobility transistors, in which the self-consistent solution of Poisson and Schr\"odinger equations is obtained with the finite element method. We solve the exact set of…
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used. This paper investigates the…
We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $\mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface…
The quantized lateral motional states and the spin states of electrons trapped on the surface of superfluid helium have been proposed as basic building blocks of a scalable quantum computer. Circuit quantum electrodynamics (cQED) allows…
Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…
Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing are filled with superfluid helium by capillary action.…
We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization.…
The system of electrons trapped in vacuum above the liquid helium surface displays the highest mobilities known in condensed matter physics. We provide a brief summary of the experimental and theoretical results obtained for this system. We…
The in-plane motion of an electron on helium can couple to superconducting microwave resonators via electrical dipole coupling, offering a robust and rapid readout scheme. In previous efforts, microwave resonator designs for electrons on…
The low-temperature dc mobility of the two-dimensional electron system localized above the surface of superfluid helium is determined by the slowest stage of the longitudinal momentum transfer to the bulk liquid, namely, by the interaction…
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired…
We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages…
By measuring the electrical transport properties of superconducting NbN quarter-wave resonators in direct contact with a helium bath, we have demonstrated a high-speed and spatially sensitive sensor for the permittivity of helium. In our…
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For higher power demands, the ultra-wide bandgap semiconductor…
The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
Transport of charge carriers in mechanically soft semiconductors is mainly limited by their interaction with slow intermolecular phonons. Carrier motion exhibits a crossover from superdiffusive to subdiffusive, producing a distinct…
An ensemble of electrons trapped above superfluid helium offers a paradigm system for investigating and controlling collective charge dynamics in low-dimensional electronic matter. Of particular interest is the ability to spatially control…
Electrons trapped on the surface of liquid helium is an extremely clean system which holds promise for a scalable qubit platform. However, the superfluid surface is not free from fluctuations which might cause the decay and dephasing of the…
We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature…