相关论文: Characterisation of SiC radiation detector technol…

We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…

The analog hadron calorimeter for the International Linear Collider (ILC) of the CALICE collaboration utilized novel silicon detectors, the Sillicon Photomultipliers (SiPMs), for the detection of scintillation light coming from very small…

The Circular Electron-Positron Collider (CEPC), a next-generation high-luminosity collider, employs a crab waist scheme to achieve ultrahigh $5 \times 10^{34} \, \text{cm}^{-2}\text{s}^{-1}$ luminosity at Higgs mode. Owing to the extremely…

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication…

The Ion Beam Induced Charge (IBIC) technique is widely used to characterize the electronic properties of semiconductor materials and devices. Its main advantage over other charge collection microscopies stems in the use of MeV ion probes,…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of…

We report on the assessment of the imaging performance of CITIUS -- a high-speed X-ray detector developed for the large-scale synchrotron radiation facility SPring-8-II -- for heavy charged particles and neutrons. To characterize the…

Silicon Carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuels. To enable an improved understanding of SiC-SiC composite performance, the development of…

Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with…

The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…

Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy…

Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…

First prototypes of large area, p-n junction, silicon carbide (SiC) detectors have been produced as part of an ongoing programme to develop a new particle identification wall for the focal plane detector of the MAGNEX magnetic spectrometer,…

For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map high electric fields with high spatial resolution, which…

For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $\epsilon_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $\epsilon_{\text{i}}$ using…

Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…

The detection efficiency and response function of a Si(Li) detector element for the SIXA spectrometer have been determined in the 500 eV to 5 keV energy range using synchrotron radiation emitted at a bending magnet of the electron storage…

The ion beam-induced charge (IBIC) analysis of a commercial silicon photodiode configured as a Position Sensitive Detector (PSD) for energetic charged particles is the subject of this report. Although the photodiode is designed for…

The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side.…