相关论文: Reconfigurable SWCNT ferroelectric field-effect tr…

We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS…

Miniaturized electronics require lightweight conductors that maintain high conductance under demanding conditions. CNT networks are promising candidates, but their transport is governed by inter-nanotube junctions where electron waves…

Programmable photonic integrated circuits are expected to play an increasingly important role to enable high-bandwidth optical interconnects, and large-scale in-memory computing as needed to support the rise of artificial intelligence and…

Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…

Time-domain nonvolatile in-memory computing (TD-nvIMC) offers a promising pathway to reduce data movement and improve energy efficiency by encoding computation in delay rather than voltage or current. This work presents a fully integrated…

We demonstrate that electroactive thin films incorporating semiconducting polymers and deterministic functionalized gold nanoclusters (ncAu25) lead to integration of the functions of resistive memory device and field-effect transistor…

We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…

Efforts aimed at large-scale integration of nanoelectronic devices that exploit the superior electronic and mechanical properties of single-walled carbon nanotubes (SWCNTs) remain limited by the difficulties associated with manipulation and…

Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements, superconducting field-effect transistors (FETs), and gate-tunable qubits. Superconducting FETs operate through…

Tri-gate ferroelectric FETs with Hf0.5Zr0.5O2 gate insulator for memory and neuromorphic applications are fabricated and characterized for multi-level operation. The conductance and threshold voltage exhibit highly linear and symmetric…

Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped…

Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfils…

This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet…

Cross-domain few-shot segmentation (CD-FSS) aims to achieve semantic segmentation in previously unseen domains with a limited number of annotated samples. Although existing CD-FSS models focus on cross-domain feature transformation, relying…

As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even…

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art…

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…