相关论文: Mid-infrared group-IV nanowire laser

Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence,…

Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end,…

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to…

We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…

A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated…

Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…

Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with…

Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…

GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be…

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…

Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…

Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging…

Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…

Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the…

III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…

GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…

The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…

Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effective and high-performance sensing and imaging technologies.…

A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick…