相关论文: Mid-infrared group-IV nanowire laser
Ultra-wide direct band gap semiconductors hold great promise for deep ultraviolet opto-electronic applications. Here we evaluate the potential of MgSiN$_2$-GaN alloys for this purpose. Although MgSiN$_2$ itself has an indirect gap $\sim$0.4…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light…
Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the…
Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly…
Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics,…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
Novel photonic nanowires were fabricated using low-index materials and tested in the near-infrared spectrum to assess their nonlinear optical properties. In this work, we argue the need to redefine the standard nonlinear figure of merit in…
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these…
Graphene photonics has emerged as a promising platform for providing desirable optical functionality. However, graphene's monolayer-scale thickness fundamentally restricts the available light matter interaction, posing a critical design…
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors…
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour…
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
Silicon photonics, compatible with large-scale silicon manufacturing, is a disruptive photonic platform that has indicated significant implications in industry and research areas (e.g., quantum, neuromorphic computing, LiDAR). Cutting-edge…
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and…
On-chip light sources are critical for the realization of fully integrated photonic circuitry. So far, semiconductor miniaturized lasers have been mainly limited to sizes on the order of a few microns. Further reduction of sizes is…