相关论文: TCAD Parameters for 4H-SiC: A Review
This work investigates the relationship between self-heating and the characteristic features observed in the current-voltage characteristics (IVCs) of superconductor-insulator-superconductor (SIS) junctions. Finite-element analysis is…
We report for the first time the occurrence of superconductivity in the quaternary silicide carbide YRe2SiC with Tc = 5.9 K. The emergence of superconductivity was confirmed by means of magnetic susceptibility, electrical resistivity, and…
SiC polytypes have been studied for decades, both experimentally and with atomistic simulations, yet no consensus has been reached on the factors that determine their stability and growth. Proposed governing factors are…
The LHCb detector with its unique pseudorapidity coverage allows to perform soft-QCD measurements in the kinematic forward region where QCD models have large uncertainties. Selected analyses related to soft-Diffraction will be summarised in…
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate…
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the…
Silicon carbide has excellent physical properties, such as high stability, thermal conductivity, and mechanical strength. It has been widely used in high-power devices, catalysis, material processing, and other fields and is of great…
Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a…
Silicon carbide is widely used in electronics, ceramics, and renewable energy due to its exceptional hardness and resistance. In this study, we investigate the effects of hydrostatic and uniaxial pressure (both compressive and tensile) on…
Multicomponent transition metal carbides are promising for extreme-environment applications, but identifying compositions that are both synthesizable and hard remains challenging. We fine-tune the MACE machine-learned interatomic potential…
A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is…
The remarkable finding of this work is the linear correlation between the critical temperature of superconducting (SC) transition, Tc, and the room-temperature half-width of angular correlation of positron annihila- tion phonons (ACPAP),…
Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. Here, we carry out an exploratory investigation of the electro-optic effect in high-quality-factor 4H-SiC…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
High resolution resistors capable of detecting minuscule currents are vital for advanced sensors, but existing off-shelf models struggle with inconsistent resistance under varying voltages. The underlying physics of this issue is rooted in…
Extensive studies on thin films indicated a generic cubic current-voltage $I-V$ dependence as a salient feature of charge transport by tunneling. A quick glance at $I-V$ data for molecular junctions suggests a qualitatively similar…
We demonstrate that the experimental data on the temperature dependence of the resistivity and conductivity for high-mobility Si-MOS structures, obtained for a wide range of densities (~ 1:7) at intermediate temperatures, agree…
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage…
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective,…
Quark number susceptibilities as computed in lattice QCD are commonly believed to provide insights into the microscopic structure of QCD matter, in particular its degrees of freedom. We generalize a previously constructed partonic…