相关论文: Quantization Design for Resistive Memories With Mu…

Deep neural networks (DNNs) are ubiquitous in computer vision and natural language processing, but suffer from high inference cost. This problem can be addressed by quantization, which consists in converting floating point operations into a…

Resistance switching random access memory (ReRAM), with the ability to repeatedly modulate electrical resistance, has been highlighted as a feasible high-density memory with the potential to replace negative-AND (NAND) flash memory. Such…

Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…

Despite the parallel in-memory search capabilities of content addressable memories (CAMs), their use in applications is constrained by their limited resolution that worsens as they are scaled to larger arrays or advanced nodes. In this work…

Efficient deployment of large language models (LLMs) requires extreme quantization, forcing a critical trade-off between low-bit efficiency and performance. Residual binarization enables hardware-friendly, matmul-free inference by stacking…

Quantization is essential for reducing the computational cost and memory usage of deep neural networks, enabling efficient inference on low-precision hardware. Despite the growing adoption of uniform and floating-point quantization schemes,…

As the demand for efficient, low-power computing in embedded and edge devices grows, traditional computing methods are becoming less effective for handling complex tasks. Stochastic computing (SC) offers a promising alternative by…

Neural network quantization is becoming an industry standard to efficiently deploy deep learning models on hardware platforms, such as CPU, GPU, TPU, and FPGAs. However, we observe that the conventional quantization approaches are…

To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient baseband processors. Traditional complementary…

In recent years, neural networks have become the default choice for image classification and many other learning tasks, even though they are vulnerable to so-called adversarial attacks. To increase their robustness against these attacks,…

3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…

There have been a plethora of research on multi-level memory devices, where the resistive random-access memory (RRAM) is a prominent example. Although it is easy to write an RRAM device into multiple (even quasi-continuous) states, it…

Segment Anything Models (SAMs) are extensively used in computer vision for universal image segmentation, but deploying them on resource-constrained devices is challenging due to their high computational and memory demands. Post-Training…

Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…

Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is…

As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed,…

This paper accelerates video perception, such as semantic segmentation and human pose estimation, by levering cross-frame redundancies. Unlike the existing approaches, which avoid redundant computations by warping the past features using…

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…

This paper focuses on robust transceiver design for throughput enhancement on the interference channel (IC), under imperfect channel state information (CSI). In this paper, two algorithms are proposed to improve the throughput of the…

In-memory computing architectures provide a much needed solution to energy-efficiency barriers posed by Von-Neumann computing due to the movement of data between the processor and the memory. Functions implemented in such in-memory…