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The discovery of 2D materials opens up unprecedented opportunities to design new materials with specified properties. In many cases, the design guiding principle is based on one or another proximity effect, i.e. the nanoscale-penetration of…

超导电性 · 物理学 2024-10-22 G. A. Bobkov , K. A. Bokai , M. M. Otrokov , A. M. Bobkov , I. V. Bobkova

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These…

介观与纳米尺度物理 · 物理学 2020-03-24 Jinshui Miao , Xiwen Liu , Kiyoung Jo , Kang He , Ravindra Saxena , Baokun Song , Huiqin Zhang , Jiale He , Myung-Geun Han , Weida Hu , Deep Jariwala

We theoretically demonstrate a gate-tunable superconducting spin valve effect (SVE) in a van der Waals (vdW) heterostructure composed of a monolayer superconductor (S) sandwiched between two ferromagnetic (F) monolayers (F/S/F). By…

超导电性 · 物理学 2025-12-11 A. S. Ianovskaia , G. A. Bobkov , A. M. Bobkov , I. V. Bobkova

Recent experimental advances in atomically thin transition metal dichalcogenide (TMD) metals have unveiled a range of interesting phenomena including the coexistence of charge-density-wave (CDW) order and superconductivity down to the…

超导电性 · 物理学 2016-08-31 Xiaoxiang Xi , Helmuth Berger , László Forró , Jie Shan , Kin Fai Mak

Tunable superconductors provide a versatile platform for advancing next-generation quantum technologies. Here, we demonstrate controllable superconductivity in suspended NbSe2 thin layers, achieved through local strain and thermal…

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

Van der Waals heterostructures (vdWHs) allow the assembly of high-crystalline two-dimensional (2D) materials in order to explore dimensionality effects in strongly correlated systems and the emergence of potential new physical scenarios. In…

强关联电子 · 物理学 2021-07-13 Carla Boix-Constant , Samuel Mañas-Valero , Rosa Córdoba , Eugenio Coronado

We have performed device-based tunnelling spectroscopy of NbSe$_2$ in the vortex state with a magnetic field applied both parallel and perpendicular to the $a-b$ plane. Our devices consist of layered semiconductors placed on top of…

超导电性 · 物理学 2018-12-26 Tom Dvir , Marco Aprili , Charis H. L. Quay , Hadar Steinberg

Device-based tunnel spectroscopy of superconductors was first performed by Giaever, whose seminal work provided clear evidence for the spectral gap in the density of states (DOS) predicted by the Bardeen-Cooper-Schrieffer (BCS) theory.…

The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in…

Two-dimensional (2D) superconductors provide a powerful building block for engineering emergent quantum states shaped by reduced dimensionality, enhanced quantum fluctuations, and interfacial symmetry breaking. In van der Waals…

介观与纳米尺度物理 · 物理学 2026-03-04 Sichun Zhao , Junlin Xiong , Ji Zhou , Shi-Jun Liang , Bin Cheng , Feng Miao

Van der Waals (vdW) superconductors - atomically thin crystalline materials that can be stacked into more complex heterostructures - have opened a promising avenue for superconducting electronics thanks to their properties that are…

超导电性 · 物理学 2026-01-13 Angelo Di Bernardo , Elke Scheer

Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and…

材料科学 · 物理学 2020-10-23 Arvind Shankar Kumar , Mingyuan Wang , Yancheng Li , Ryuji Fujita , Xuan P. A. Gao

Van der Waals heterostructures have risen as a tunable platform to combine different electronic orders, due to the flexibility in stacking different materials with competing symmetry broken states. Among them, van der Waals ferromagnets…

超导电性 · 物理学 2022-02-09 Faluke Aikebaier , Tero T. Heikkilä , J. L. Lado

Superlattice engineering provides the means to reshape the fabric felt by quasiparticles moving in a material. Here we argue that bandstructure engineering with superlattices can be pushed to the extreme limit by stacking gapped van der…

介观与纳米尺度物理 · 物理学 2020-01-15 Li-kun Shi , Jing Ma , Justin C. W. Song

Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…

介观与纳米尺度物理 · 物理学 2016-10-11 Ke Wang , Takashi Taniguchi , Kenji Watanabe , Philip Kim

Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…

Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…

材料科学 · 物理学 2020-12-30 Hua Bai , Xinwei Wang , Weikang Wu , Pimo He , Zhu'an Xu , Shengyuan A. Yang , Yunhao Lu

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in…

应用物理 · 物理学 2018-02-15 Krishna Murali , Medha Dandu , Sarthak Das , Kausik Majumdar

Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique…

介观与纳米尺度物理 · 物理学 2020-05-12 Yue Li , Chen Chen , Wei Li , Xiaoyu Mao , Heng Liu , Jianyong Xiang , Anmin Nie , Zhongyuan Liu , Wenguang Zhu , Hualing Zeng
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