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Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe$_2$ to high-refractive-index gallium phosphide dielectric…
The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated. In consideration of the quantum dot density, the pillar diameter was determined as only a few quantum dots were involved in a pillar. The lattice constant of a…
Coupling single photon emitters to surface plasmons provides a versatile ground for on chip quantum photonics. However, achieving good coupling efficiency requires precise alignment of both the position and dipole orientation of the emitter…
Atomically flat semiconducting materials such as monolayer WSe$_2$ hold great promise for novel optoelectronic devices. Recently, quantum light emission has been observed from bound excitons in exfoliated WSe$_2$. As part of developing…
Atomic monolayers of transition metal dichalcogenides represent an emerging material platform for the implementation of ultra compact quantum light emitters via strain engineering. In this framework, we discuss experimental results on…
Quantum-dot-like WSe$_2$ single-photon emitters have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering.…
We discuss coupling of site-selectively induced quantum emitters in exfoliated monolayers of WSe$_2$ to plasmonic nanostructures. Squared and rectangular gold nanopillars, which are arranged in pitches of \SI{4}{\micro\meter} on the…
Plasmonic nano-structures provides an efficient way to control and enhance the radiative properties of quantum emitters. Coupling these structures to single defects in low-dimensional materials provides a particularly promising material…
Transition metal dichalcogenide (TMD) single photon emitters (SPEs) offer numerous advantages to quantum information applications, such as high single photon purity and deterministic positioning. Strain in the host monolayer, induced by…
In recent years, much research has been undertaken to investigate the suitability of two-dimensional materials to act as single-photon sources with high optical and quantum optical quality. Amongst them, transition-metal dichalcogenides,…
Scalable photonic quantum information technologies require a platform combining quantum light sources, waveguides, and detectors on a single chip. Here, we introduce a van der Waals platform comprising strain-engineered bilayer WSe$_2$…
Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such…
In this paper, we demonstrate the infrared photoluminescence emission from Ge(Si) quantum dots enhanced with collective Mie modes of silicon nanopillars. We show that the excitation of band edge dipolar modes of a linear nanopillar array…
Controlling light emission from quantum emitters has important applications ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at…
A scalable excitation platform for nanophotonic emitters using individually addressable micro-LED-on-CMOS arrays is demonstrated for the first time. Heterogeneous integration by transfer-printing of semiconductor nanowires was used for the…
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along…
Solid-state single-quantum emitters are a crucial resource for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level. Previous approaches to enhance…
Rate of single-photon generation by quantum emitters (QEs) can be enhanced by placing a QE inside a resonant structure. This structure can represent an all-dielectric micro-resonator or waveguide and thus be characterized by ultra-low loss…
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising…
Localized quantum emitters in transition-metal dichalcogenides (TMDs) have recently emerged as solid-state candidates for on-demand sources of single photons. Due to the role of strain in the site-selective creation of TMD emitters, their…