相关论文: Domain wall reactions in multiple-order parameter …
Hysteretic switching of domain states is a salient character of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a new type of ferroic order featuring structural…
Point defect migration is considered as a mechanism for aging in ferroelectrics. Numerical results are given for the coupled problems of point defect migration and electrostatic energy relaxation in a 2D domain configuration. The peak…
Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to oscillations in the conduction band in the channel and…
Atomically sharp domain walls (DWs) in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive DWs have been…
Intertwined ionic conduction and ferroelectric (FE) switching in HfO2 lead to extensive focuses. To describe its fundamental phenomena, we present a free-energy model describing the potential of ferroelectrics with successive FE switching…
The Barkhausen jumps or avalanches in magnetic domain-walls motion between succesive pinned configurations, due the competition among magnetic external driving force and substrum quenched disorder, appear in bulk materials and thin films.…
Current-induced dynamics of twisted domain walls and skyrmions in ferromagnetic perpendicularly magnetized multilayers is studied through three-dimensional micromagnetic simulations and analytical modeling. It is shown that such systems…
Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of…
We show that in the collision of two superfluid fermionic atomic clouds one observes the formation of quantum shock waves as discontinuities in the number density and collective flow velocity. Domain walls, which are topological excitations…
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with an enormously high ON/OFF ratio. In the last 20 years,…
Controlling the domain structure of ferroic materials is key to manipulating their functionality. Typically, quasi-static electric, magnetic, or strain fields are exploited to transform or pole ferroic domains. In contrast, metallurgy makes…
We investigate the dynamics of ferroelectric textures driven by polarization currents. We show that, ferrons, the quanta of collective polarization excitations, provide an exotic driving mechanism for domain wall (DW) dynamics, compared…
We study the magnetic dynamics of magnetoelectric antiferromagnetic thin films, where an unconventional boundary ferromagnetism coexists with the bulk N\'{e}el phase below the N\'{e}el temperature. The spin exchange between the two order…
Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in energy storage applications and give rise to large…
For antiferromagnetically coupled Fe/Cr multilayers the low field contribution to the resistivity, which is caused by the domain walls, is strongly enhanced at low temperatures. The low temperature resistivity varies according to a power…
Magnetoelectric coupling in multiferroic heterostructures can produce large lateral modulations of magnetic anisotropy enabling the imprinting of ferroelectric domains into ferromagnetic films. Exchange and magnetostatic interactions within…
Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in…
The dynamics of a domain wall driven by a spin-polarized current in a mesoscopic system is studied numerically. Spin-mixing in the states of the conduction electrons is fully taken into account. When the Fermi energy of the electrons is…
The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging…
Control of magnetic domain wall motion holds promise for efficient manipulation and transfer of magnetically stored information. Thermal magnon currents, generated by temperature gradients, can be used to move magnetic textures, from domain…