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Sliding and twisting van der Waals layers with respect to each other gives rise to moir\'e structures with emergent electronic properties. Electrons in these moir\'e structures feel weak potentials that are typically in the tens of…
Achieving external control over the anomalous valley Hall (AVH) effect is essential for advancing valleytronic applications. However, many of the existing approaches suffer from limitations such as irreversibility or volatility. In this…
Quantum processors based on linear arrays of trapped ions have achieved exceptional performance, but scaling to large qubit numbers requires realizing two-dimensional ion arrays as envisioned in the quantum charge-coupled device (QCCD)…
We consider nanoflakes of van der Waals ferrielectric CuInP$_2$S$_6$ covered by an ionic surface charge and reveal the appearance of polar states with relatively high polarization ~5 microC/cm$^2$ and stored free charge ~10 microC/cm$%2$,…
Misfit layer compounds are heterostructures composed of rocksalt units stacked with few layers transition metal dichalcogenides. They host Ising superconductivity, charge density waves and good thermoelectricity. The design of misfits…
Sliding ferroelectricity may emerge in many van der Waals bilayers/multilayers and the low switching barriers render ultrafast data writing with low energy cost. We note that such barriers are still much higher compared with structural…
Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and…
Sliding ferroelectricity in bilayer van der Waals materials exhibits ultrafast switching speed and fatigue resistance during the polarization switching, offering an avenue for the design of memories and neuromorphic devices. The unique…
The manipulation of mesoscale domain wall phenomena has emerged as a powerful strategy for designing ferroelectric responses in functional devices, but its full potential has not yet been realized in the field of magnetism. We show that…
Nonlinear optical processes rely on the intrinsically weak interactions between photons enabled by their coupling with matter. Unfortunately, many applications in nonlinear optics are severely hindered by the small response of conventional…
We report on spin atomistic calculations used to model static and dynamic magnetic properties of inhomogeneous ultrathin iron films. Active magnetic layers in next-generation spintronic devices are becoming so thin that they exhibit some…
Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic…
Controlling the polarization switching in the ferroelectric nanocrystals, nanowires and nanodots has an inherent specificity related to the emergence of depolarization field that is associated with the spontaneous polarization. This field…
Very recently, field-effect transistors based on few-layer phosphorene crystals with thickness down to a few nanometres have been successfully fabricated, triggering interest in this new functional two-dimensional material. In this work, we…
Electric-polarization reversibility in nano-ferroelectric structures renders them as a convenient platform for exploring phase transitions and developing energy-efficient switching devices. However, the fundamental question of how ferroic…
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic…
Van der Waals (vdW) moires offer tunable superlattices that can strongly manipulate electronic properties. We demonstrate the in-situ manipulation of moire superlattices via heterostrain control in a vdW device. By straining a graphene…
The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to…