相关论文: Two-dimensional non-volatile valley spin valve
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
The interplay among quantum degrees of freedom-spin, orbital and momentum-has emerged as a fertile ground for realizing magnetic quantum states with transformative potential for electronic and spintronic technologies. Prominent examples…
Two dimensional (2D) magnets have emerged as a compelling platform for spin based nanoelectronics, enabling atomic scale control of magnetic order, interfaces, quantum geometry, and symmetry. Here, we highlight recent advances in 2D…
Inspired by the profound physical connotations and potential application prospects of the valleytronics, we design a two-dimensional (2D) WS2/h-VN magnetic van der Waals (vdW) heterostructure and study the control of valley degree of…
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…
We propose a valley- and spin-filter based on a normal/ferromagnetic/normal molybdenum disulfide (MoS$_2$) junction where the polarizations of the valley and the spin can be inverted by reversing the direction of the exchange field in the…
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties…
In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
The coupling of spin and valley physics is nowadays regarded as a promising route toward next-generation spintronic and valleytronic devices. In the aim of engineering functional properties for valleytronic applications, we focus on the…
Controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here we discover a universal possibility for generating spin and valley currents by electric bias or…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that…
Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and…
Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate…
There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…
Quantum spin Hall (QSH) insulator materials feature topologically protected edge states that can drastically reduce dissipation and are useful for the next-generation electronics. However, the nonvolatile control of topological edge state…