中文
相关论文

相关论文: Fractional Chern insulators in moir\'e flat bands …

200 篇论文

In the framework of Hofstadter`s approach we provide a detailed analysis of a realization of exotic topological states such as the Chern insulator with large Chern numbers. In a transverse homogeneous magnetic field a one-particle spectrum…

强关联电子 · 物理学 2017-12-27 Igor N. Karnaukhov

The interplay of topological characteristics in real space and reciprocal space can lead to the emergence of unconventional topological phases. In this Letter, we implement a novel mechanism for generating higher-Chern flat bands on the…

强关联电子 · 物理学 2021-11-23 Yifei Guan , Oleg V. Yazyev , Alexander Kruchkov

Recent experiments observed fractional Chern insulators (FCI) in twisted bilayer MoTe$_2$ at zero magnetic field, yet even the single-particle model of this material is controversial, leading to unreliable predictions of the experimental…

Recent experiments in graphene heterostructures have observed Chern insulators - integer and fractional Quantum Hall states made possible by a periodic substrate potential. Here we study theoretically the competition between different Chern…

强关联电子 · 物理学 2018-07-25 Jong Yeon Lee , Chong Wang , Michael P. Zaletel , Ashvin Vishwanath , Yin-Chen He

The concept of Chern insulators is one of the most important buliding block of topological physics, enabling the quantum Hall effect without external magnetic fields. The construction of Chern insulators has been typically through an…

介观与纳米尺度物理 · 物理学 2024-07-24 Sungjong Woo , Seungbum Woo , Jung-Wan Ryu , Hee Chul Park

Recently Chern insulators with Chern number $C=1$ and $C=2$ in zero (or very small) magnetic field have been observed in two moire graphene systems: twisted bilayer graphene and ABC trilayer graphene, both aligned with a hexagonal…

强关联电子 · 物理学 2020-10-07 Ya-Hui Zhang , T. Senthil

We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of…

介观与纳米尺度物理 · 物理学 2021-01-18 Zhao Liu , Ahmed Abouelkomsan , Emil J. Bergholtz

Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system…

Enhancing the many-body gap of a fractional state is crucial for realizing robust fractional excitations. For fractional Chern insulators, existing studies suggest that making flat Chern bands closely resemble the lowest Landau level (LLL)…

强关联电子 · 物理学 2025-11-25 Yitong Zhang , Siddhartha Sarkar , Xiaohan Wan , Daniel E. Parker , Shi-Zeng Lin , Kai Sun

We study the interplay between quantum Hall ordering and spontaneous sublattice symmetry breaking in multiple Chern number bands at fractional fillings. Primarily we study fermions with repulsive interactions near half filling in a family…

强关联电子 · 物理学 2015-06-22 Akshay Kumar , Rahul Roy , S. L. Sondhi

We propose a set of schemes to create and probe fractionally charged excitations of a fractional Chern insulator state in an optical lattice. This includes the creation of localized quasiparticles and quasiholes using both static local…

量子气体 · 物理学 2019-01-03 Mantas Račiūnas , F. Nur Ünal , Egidijus Anisimovas , André Eckardt

In 2D semiconductors and insulators, the Chern number of the valence band Bloch state is an important quantity that has been linked to various material properties, such as the topological order. We elaborate that the opacity of 2D materials…

强关联电子 · 物理学 2023-10-25 Paolo Molignini , Bastien Lapierre , R. Chitra , Wei Chen

The Chern number is a crucial topological invariant for distinguishing the phases of Chern insulators. Here we find that for Chern insulators with inversion symmetry, the Chern number alone is insufficient to fully characterize their…

介观与纳米尺度物理 · 物理学 2024-10-01 Yu-Hao Wan , Peng-Yi Liu , Qing-Feng Sun

We predict robust Ising ferromagnetism driven by Coulomb interaction in the metallic phase of twisted transition metal dichalcogenides homobilayers for a range of small twist angles. Due to the presence of spin-valley locking and Chern…

强关联电子 · 物理学 2023-05-24 Valentin Crépel , Liang Fu

Fractional Chern insulators are new realizations of fractional quantum Hall states in lattice systems without orbital magnetic field. These states can be mapped onto conventional fractional quantum Hall states through the Wannier state…

强关联电子 · 物理学 2014-09-04 Ching Hua Lee , Xiao-Liang Qi

We show that all the bands of the Hofstadter model on the torus have an exactly flat dispersion and Berry curvature when a special system size is chosen. This result holds for any hopping and Chern number. Our analysis therefore provides a…

强关联电子 · 物理学 2014-09-24 Thomas Scaffidi , Steven H. Simon

We introduce a universal formulation of the generalized real space interactions with translational invariance, when projected into a single Landau level, can be equivalent to density-density interaction projected into any Chern bands (e.g.…

强关联电子 · 物理学 2025-03-26 Bo Yang

We investigate the effect of remote band mixing on the stability of fractional Chern insulators in a family of models that approximate continuum descriptions of moir\'e materials. Our results suggest that the experimentally observed…

强关联电子 · 物理学 2026-04-21 Nicolás Morales-Durán , Jingtian Shi , Cristian Voinea , Paweł Potasz , Jennifer Cano

We show that the flat bands in the chiral model of magic-angle twisted bilayer graphene remain exactly flat in the presence of a perpendicular magnetic field. This is shown by an exact mapping between the model and the lowest Landau level…

强关联电子 · 物理学 2021-09-29 Yarden Sheffer , Ady Stern

Graphene-based moire superlattices exhibit novel quantum phenomena driven by pronounced interactions, leading to topological corrected states like orbital Chern insulators exhibiting quantum anomalous Hall effect (QAHE). Typically,…

介观与纳米尺度物理 · 物理学 2025-12-29 Zaizhe Zhang , Xi Chen , Kenji Watanabe , Takashi Taniguchi , Zhida Song , Xiaobo Lu