相关论文: Patterning of Fine Features on Material Surfaces U…
The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is…
Focused ion beam irradiation of metastable Fe$_{78}$Ni$_{22}$ thin films grown on Cu(100) substrates is used to create ferromagnetic, body-centered-cubic patterns embedded into paramagnetic, face-centered-cubic surrounding. The structural…
Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material…
We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam…
The paper reports on a high precision equipment designed to modify over 3-dimensions (3D) by means of high-energy gold ions the local properties of thin and thick films. A target-moving system aimed at creating patterns across the volume is…
We have introduced here a simple, single step and cost effective broad ion beam technique for preparation of nanoscale electronic, magnetic, optical and mechanical devices without the need of resist, mask, or focused electron and ion beams.…
Focused ion beam milling allows manipulation of the shape and size of nanostructures to create geometries potentially useful for opto-electronics, thermoelectrics, and quantum computing. We focus on using the ion beam to control the…
On the proper timescale, amorphous solids can flow. Solid flow can be observed macroscopically in glaciers or lead pipes, but it can also be artificially enhanced by creating defects. Ion Beam Sputtering (IBS) is a technique in which ions…
We show that the ion beam induced incompressible amorphous solid flow in terms of advection transport mechanism leads to the erosion and deposition of atoms at the amorphous/crystalline (a/c) interface resulting in the formation of pattern…
Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation, rather than flat surfaces, for irradiation beyond some critical angle against the surface normal. It is observed experimentally…
Focused ion beams (FIBs) are widely used in nanofabrication for applications such as circuit repair, ultra-thin lamella preparation, strain engineering, and quantum device prototyping. Although the lateral spread of the ion beam is often…
Ion Beam Sputtering (IBS) is a cost-effective technique able to produce ordered nanopatterns on the surfaces of different materials. To date, most theoretical studies of this process have focused on systems which become amorphous under…
We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or…
The Single Ion Differential alpha Measurement (SIDAM) method for measuring fine stucture variations (daa)and its figures of merit are illustrated together with the results produced by means of FeII absorption lines of QSO intervening…
Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides…
The ion-bombardment induced nanopatterning of Si(001) has been simulated by atomistic simulations with and without Fe impurity. The surface contamination has been simulated by using a new force field developed for FeSi. This is a fitted…
Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation beyond some critical angle of the beam versus the surface. It is known from experimental results that this critical angle varies…
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped…
The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device are optimized. Importantly, the Si-SiO2 interface plays a…
We report the decisive role of reactive ion impurities in low energy Ar+ ion beam on surface nanopattern formation. The source of experimental inconsistency in pattern formation by low energy (few keV to 10's of KeV) Ar+ ion beam has been…