相关论文: Enhanced Radiation Hardness of InAs/GaAs Quantum D…
This study investigates the effects of space environmental radiation on the performance of InGaAs Quadrant Photodiodes (QPDs) and assesses their suitability for the Laser Interferometer Space Antenna (LISA) mission. QPDs of 1.0, 1.5 and 2.0…
The purpose of this research is to study laser dynamics of InAs/GaAs Quantum Dot Lasers (QDLs) by changing QD energy levels. To date, most of the investigations have focused on only one of these circumstances, and hardly the result of…
The influence of indium percentage on dynamical characteristics of InxGa1-xAs/GaAs(001) quantum dot lasers (QDLs) is investigated. Energy levels of self-organized truncated-cone-shape QDs are calculated by means of the eight-band k.p model,…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
Quantum dot light-emitting diodes (QLEDs) are promising building blocks for prospective lighting and display applications. Despite the significant advancements achieved towards increasing the efficiency and brightness levels of QLEDs, the…
The security of quantum key distribution (QKD) systems relies on the physical integrity of their components. While laser-damage attacks (LDAs) using high-power continuous-wave (cw) lasers have been well studied, the threat posed by pulsed…
We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL)…
In this paper, we have studied the strain, bandedge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, and also in smaller QDs. Also, it is…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…
Colloidal quantum dots (QDs) are promising emitters for electroluminescence devices (QD light-emitting-diodes, QLEDs). Though QDs have been synthesized with efficient and stable photoluminescence, inheriting their superior luminescence in…
Simultaneous two-state lasing is a unique property of semiconductor quantum-dot (QD) lasers. This not only changes steady-state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate…
The study investigates and compares the impact of intense, non-diffractive, non-resonant structured laser beams with various intensity profiles on the properties of InAs/GaAs cylindrical quantum dot. The comparative study demon-strates that…
Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an…
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…
Semiconductor quantum dots (QDs) provide an essential link between light and matter in emerging fields such as light-harvesting, all-solid-state quantum communication, and quantum computing. QDs are excellent single-photon sources and can…
The dynamic response of InAs/GaAs self-assembled quantum dots (QDs) to strain is studied experimentally by periodically modulating the QDs with a surface acoustic wave and measuring the QD fluorescence with photoluminescence and resonant…
Fibers lasers is a field which is typically dominated by rare earth ions as gain material in the core of a silica optical waveguide. Due to their specific emission wavelengths, rare-earth doped fiber lasers are available only at few…
We study the processes in a quantum dot and its surrounds under resonant excitation with the addition of weak non-resonant light. We observe a decrease in inhomogeneous emission linewidth, as well as previously observed enhancement of…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…