相关论文: Strain engineering in Ge/GeSi spin qubits heterost…
Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of…
Strain engineering allows the physical properties of materials and devices to be widely tailored, as paradigmatically demonstrated by strained transistors and semiconductor lasers employed in consumer electronics. For this reason, its…
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with…
Recently, the notion of topological phases of matter has been extended to higher-order incarnations, supporting gapless modes on even lower dimensional boundaries, such as corners and hinges. We here identify a collection of cubic spin-3/2…
We study the effect of uniaxial strain on the band structure of ZrSe$_3$, a semiconducting material with a marked in-plane structural anisotropy. By using a modified 3-point bending test apparatus, thin ZrSe$_3$ flakes were subjected to…
The strain induced pseudo-magnetic field in supported graphene deposited on top of a nanostructured substrate is investigated by using atomistic simulations. Step, elongated trench, one dimensional barrier, spherical bubbles, Gaussian bump…
The inhomogeneous magnetic stray field of micromagnets has been extensively used to manipulate electron spin qubits. By means of micromagnetic simulations and scanning superconducting quantum interference device microscopy, we show that the…
A Twinning Induced Plasticity (TWIP) steel with a nominal composition of Fe-16.4Mn-0.9C-0.5Si-0.05Nb-0.05V was deformed to an engineering strain of 6\%. The strain around the deformation twins were mapped using the 4D-STEM technique. Strain…
The limitation of commercially available single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and…
We show electrical coherent manipulation of quadrupole-split nuclear spin states in a GaAs/AlGaAs heterostructure on the basis of the breakdown of quantum Hall effect. The electric quadrupole splitting in nuclear spin energy levels is…
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal…
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor…
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading…
Using the first-principles calculations based on density functional theory, we systematically investigate the strain-engineering (tensile and compressive strain) electronic, mechanical and transport properties of monolayer penta-SiC$_2$. By…
Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such…
Enhancing spin-to-charge (S$\rightarrow$C) conversion efficiency remains a key challenge in spintronic materials research. In this work we investigate the effect of substrate-induced strains onto the S$\rightarrow$C efficiency. On one hand,…
We present a comprehensive study of the low-field magnetoresistance in carbon doped p-type GaAs/AlGaAs heterostructures aiming at the investigation of spin-orbit interaction effects. The following signatures of exceptionally strong…
Electric fields are increasingly used for coherently manipulating spin states in semiconductor and molecular systems. Here we discuss the spin manipulation allowed by the modulation of the main parameters entering the Hamiltonians of…