相关论文: Strain engineering in Ge/GeSi spin qubits heterost…
We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…
Two-dimensional hole gases (2DHGs) have strong intrinsic spin-orbit coupling and could be used to build spin filters by utilising transverse magnetic focusing (TMF). However, with an increase in the spin degree of freedom, holes demonstrate…
Density functional study of strain effects on the electronic band structure and transport prop- erties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain in the x (nearest-neighbor) and y (second nearest-neighbor)…
Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins…
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as…
GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface.…
Altermagnets are collinear magnetic materials with 'alter'nating local crystalline environments, characterized by joint spin and crystalline symmetries that enable ferromagnetic-like transport properties but with vanishing net…
We study the effect of electron interaction on the spin-splitting and the $g$-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the $g$-factor is…
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that…
Using the determinant quantum Monte-Carlo method, we elucidate the strain tuning of edge magnetism in zigzag graphene nanoribbons. Our intensive numerical results show that a relatively weak Coulomb interaction may induce a…
Strain applied to a condensed-matter system can be used to engineer its excitation spectrum via artificial gauge fields, or it may tune the system through transitions between different phases. Here we demonstrate that strain tuning of the…
We discuss the modeling of the electrical manipulation of spin qubits in the linear-response regime where the Rabi frequency is proportional to the magnetic field and to the radio-frequency electric field excitation. We show that the Rabi…
We present a computational study of the magnetic anisotropy energy for a given concentration of the Mn ions in the GaAs host, in the framework of the density functional theory. We focus on the influence of a different kind of strains on the…
Magnetic-field gradients are important for single-site addressability and electric-dipole spin resonance of spin qubits in semiconductor devices. We show that these advantages are offset by a potential reduction in coherence time due to the…
The paper discusses the influence of the external in-plane electric and magnetic field on the ground state spin phase diagram of selected monolayer graphene nanostructures. The calculations are performed for triangular graphene nanoflakes…
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the…
We investigate effects of lateral confinement on spin splitting of energy levels in 2D hole gases grown on [311] GaAs. We found that lateral confinement enhances anisotropy of spin splitting relative to the 2D gas for both confining…
We perform tilt-field transport experiment on inverted InAs/GaSb which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different…
Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation of the electrical resistance of Ge(111) grown epitaxially on…
Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications.…