相关论文: Electrically activated W-doped VO2 films for relia…
Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin…
Vanadium (IV) oxide is one of the most promising materials for thermochromic films due to its unique, reversible crystal phase transition from monoclinic (M1) to rutile (R) at its critical temperature (T$_c$) which corresponds to a change…
We present a novel method enabling precise post-fabrication modulation of the electrical resistance in micrometer-scale regions of amorphous indium oxide (a-InO$_x$) films. By subjecting initially insulating films to an electron beam at…
Terahertz (THz) technology is critical for quantum material physics, biomedical imaging, ultrafast electronics, and next-generation wireless communications. However, standing in the way of widespread applications is the scarcity of…
Active tuning and switching of electromagnetic properties of materials is of great importance for controlling their interaction with electromagnetic waves. Superconductors are the only natural materials that exhibit diamagnetic switching at…
Spintronic Terahertz emitters, based on optically triggered spin-to-charge interconversion processes, have recently emerged as novel route towards compact and efficient THz sources. Yet, the next challenge for further…
In this letter we report and investigate the temperature dependency of various radio frequency parameters (RF) for a fabricated reconfigurable bandstop filter with vanadium dioxide (VO2) switches measured up to 55 GHz. Here the insulator to…
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt…
High-temperature superconductor (HTS) BSCCO-based coherent terahertz (THz) sources have shown great potential as one of the leading solid-state platforms in THz science and technology. Stable, and chip-scale photonic components must be…
The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…
Thermally activated abrupt switching between localized and itinerant electronic states during the insulator-metal transition (IMT) in correlated oxide systems serves as a powerful platform for exploring exotic physical phenomena and device…
The nonlinear optical response of materials under high-intensity electromagnetic fields is key to advancing THz optical technologies. This study introduces a theoretical approach to estimate the nonlinear refractive index coefficient n2 of…
In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of…
Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…
We theoretically propose a new approach to in-situ monitor the altered states of pixels in VO2 based active THz amplitude metagrating by using surface acoustic waves (SAWs) generated in LiNbO3 substrate. A single broadband RF response of…
Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great…
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of…
Characterizing and controlling the out-of-equilibrium state of nanostructured Mott insulators hold great promises for emerging quantum technologies while providing an exciting playground for investigating fundamental physics of…
Three-dimensional topological insulators possess various interesting properties that are promising for various modern applications, including in the recently emerging fields of ultrafast THz photonics and spintronics. Their gapless…
We have measured photoemission spectra of two kinds of TiO$_2$-capped VO$_2$ thin films, namely, that with rutile-type TiO$_2$ (r-TiO$_2$/VO$_2$) and that with amorphous TiO$_2$ (a-TiO$_2$/VO$_2$) capping layers. Below the Metal-insulator…