相关论文: Optically Pumped Terahertz Amplitude Modulation in…

We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and…

The effect of the photoinduced absorption of terahertz (THz) radiation in a semi-insulating GaAs crystal is studied by the pulsed THz transmission spectroscopy. We found that a broad-band modulation of THz radiation may be induced by a…

Terahertz (THz) generation by optical rectification (OR) using tilted-pulse-fronts is studied. One-dimensional (1-D) and 2-D spatial models, which simultaneously account for (i) the nonlinear coupled interaction of the THz and optical…

A model for THz generation by optical rectification using tilted-pulse-fronts is developed. It simultaneously accounts for (i) the spatio-temporal distortions of the optical pump pulse, (ii) the nonlinear coupled interaction of THz and…

We report on generation of pulsed broadband terahertz radiation utilizing the inverse spin Hall effect in Fe/Pt bilayers on MgO and sapphire substrates. The emitter was optimized with respect to layer thickness, growth parameters,…

Active control of optical nonlinearity is essential for advancing next-generation electronics and photonics, including high-speed wireless communications, optical information processing, and nonlinear signal manipulation. However, achieving…

A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in…

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket…

The Teraherz (THz) photoresponse of a two-dimensional electron gas in the quantum Hall regime is investigated. We use a sample structure which is topologically equivalent to a Corbino geometry combined with a cross-gate technique. This…

The coherent modulation of electronic and vibrational nonlinearities in atoms and molecular gases by intense few-cycle pulses has been used for high-harmonic generation in the soft X-ray and attosecond regime, as well as for Raman frequency…

Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to…

A semi-classical Monte Carlo model for studying three-dimensional carrier dynamics in photoconductive switches is presented. The model was used to simulate the process of photoexcitation in GaAs-based photoconductive antennas illuminated…

We study the generation of narrowband terahertz (THz) pulses by stimulated Raman scattering and molecular modulation in hydrogen-filled hybrid hollow-core fibers. Using a judicious combination of materials and transverse structures, this…

Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the…

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs…

Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds…

The manipulation of visible and near-infrared light at the single-photon level plays a key role in quantum communication systems where information is encoded into photonic degrees of freedom. In practical implementations, it is important to…

Germanium-on-Silicon (Ge-on-Si) is a promising, CMOS-compatible platform for integrated terahertz (THz) photonics, offering a low-cost alternative to III-V semiconductors. A primary challenge for Ge-based photoconductive antennas (PCAs),…

We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a…

Spatially indirect Type-II band alignment in magnetically-doped quantum dot (QD) structures provides unexplored opportunities to control the magnetic interaction between carrier wavefunction in the QD and magnetic impurities. Unlike the…